Semiconductor device and driving method thereof

ABSTRACT

A voltage equal to the threshold value of a TFT ( 106 ) is held in capacitor unit ( 109 ). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT ( 106 ). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit ( 109 ) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit ( 109 ) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/767,038, filed Feb. 14, 2013, now allowed, which is a continuation ofU.S. application Ser. No. 13/267,261, filed Oct. 6, 2011, now U.S. Pat.No. 8,378,356, which is a continuation of U.S. application Ser. No.12/110,379, filed Apr. 28, 2008, now U.S. Pat. No. 8,035,109, which is acontinuation of U.S. application Ser. No. 10/279,000, filed Oct. 24,2002, now U.S. Pat. No. 7,365,713, which claims the benefit of a foreignpriority application filed in Japan as Serial No. 2001-326397 on Oct.24, 2001, all of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the structure of a semiconductor devicehaving a transistor. In particular, the present invention relates to thestructure of an active matrix type semiconductor device having a thinfilm transistor (hereinafter referred to as TFTs) manufactured on aninsulator such as glass and plastic. Further, the present inventionrelates to electronic equipment using this type of semiconductor deviceas a display portion.

2. Description of the Related Art

In recent years, the development of display devices using a lightemitting element such as an electroluminescence (EL) element has becomeactive. A light emitting element emits light by itself, and thus, hashigh visibility. The light emitting element does not need a backlightnecessary for a liquid crystal display device (LCD), which is suitablefor a reduction of a light emitting device in thickness. Also, the lightemitting element has no limitation on a viewing angle.

The term EL element indicates an element having a light emitting layerin which luminescence generated by the application of an electric fieldcan be obtained. There are a light emission when returning to a basestate from a singlet excitation state (fluorescence), and a lightemission when returning to a base state from a triplet excitation state(phosphorescence) in the light emitting layer, and a semiconductordevice of the present invention may use either of the aforementionedtypes of light emission.

EL elements normally have a laminate structure in which a light emittinglayer is sandwiched between a pair of electrodes (anode and cathode). Alaminate structure having “an anode, a hole transporting layer, a lightemitting layer, an electron transporting layer, and a cathode”, proposedby Tang et al. of Eastman Kodak Company, can be given as a typicalstructure. This structure has extremely high efficiency light emission,and most of the EL elements currently being researched employ thisstructure.

Further, structures having the following layers laminated in orderbetween an anode and a cathode also exist: a hole injecting layer, ahole transporting layer, a light emitting layer, and an electrontransporting layer; and a hole injecting layer, a hole transportinglayer, a light emitting layer, an electron transporting layer, and anelectron injecting layer. Any of the above-stated structures may beemployed as the EL element structure used in the semiconductor device ofthe present invention. Furthermore, fluorescent pigments and the likemay also be doped into the light emitting layer.

All layers formed in EL elements between the anode and the cathode arereferred to generically as “EL layers” in this specification. Theaforementioned hole injecting layer, hole transporting layer, lightemitting layer, electron transporting layer, and electron injectinglayer are all included in the category of EL layers, and light emittingelements structured by an anode, an EL layer, and a cathode are referredto as EL elements.

FIG. 3 shows a configuration of a pixel in a general semiconductordevice. Note that, for example, an EL display device is used as atypical semiconductor device. The pixel shown in FIG. 3 has a sourcesignal line 301, a gate signal line 302, a switching TFT 303, a drivingTFT 304, capacitor means 305, an EL element 306, a current supply line307, and a power source line 308.

A connection relationship among the respective elements will bedescribed. Here, a TFT has three terminals of a gate, a source and adrain. However, with respect to the source and the drain, both cannot beclearly distinguished because of a structure of the TFT. Thus, when theconnection among elements is described, one of the source and the drainrepresents a first electrode and the other represents a secondelectrode. When the description of potentials of the respectiveterminals (voltage between the gate and the source of a TFT, or thelike) or the like is required with respect to ON and OFF of a TFT, forexample, the source and the drain are indicated.

Also, in this specification, turning ON of a TFT indicates a state inwhich a voltage between the gate and source of the TFT exceeds athreshold value thereof and a current flows between the source and thedrain. In addition, turning OFF of a TFT indicates a state in which avoltage between the gate and source of the TFT becomes lower than athreshold value thereof and a current does not flow between the sourceand the drain.

The gate electrode of the switching TFT 303 is connected with the gatesignal line 302, the first electrode thereof is connected with thesource signal line 301, and the second electrode thereof is connectedwith the gate electrode of the driving TFT 304. The first electrode ofthe driving TFT 304 is connected with the current supply line 307 andthe second electrode thereof is connected with the first electrode ofthe EL element 306. The second electrode of the EL element 306 isconnected with the power source line 308. The capacitor means 305 isconnected between the gate electrode of the driving TFT 304 and thefirst electrode thereof and holds a voltage between the gate and thesource of the driving TFT 304.

When a potential on the gate signal line 302 is changed to turn ON theswitching TFT 303, a video signal inputted to the source signal line 301is inputted to the gate electrode of the driving TFT 304. A voltagebetween the gate and the source of the driving TFT 304 is determinedaccording to a potential of the inputted video signal so that a currentflowing between the source and the drain of the driving TFT 304(hereinafter referred to as a drain current) is determined. The currentis supplied to the EL element 306 to emit light.

Now, a TFT made of polycrystalline silicon (polysilicon, hereinafterreferred to as P-Si) has higher field effect mobility than a TFT made ofamorphous silicon (hereinafter referred to as A-Si) and a larger ONcurrent than that. Thus, it is more suitable as a transistor used for asemiconductor device.

On the other hand, with respect to the TFT made of polysilicon, there isa problem in that variations in electrical characteristics are easy tocause by a defect in a grain boundary.

In the pixel shown in FIG. 3, when characteristics such as a thresholdvalue and an ON current of a TFT composing the pixel are varied for eachpixel, even in the case where the same video signal is inputted, anamount of a drain current of the TFT is changed according thereto sothat the intensity of the EL element 306 is varied. Thus, in the case ofanalog gradation, it becomes a problem.

Therefore, a digital gradation method of driving an EL element with onlytwo states in which the intensity is 100% and 0% using a region in whicha threshold value of a TFT or the like is hard to influence an ONcurrent is proposed. According to this method, only two gray levels ofwhite and black can be expressed. Thus, it is combined with a timegradation method or the like so that multi-gradation is realized.

When a method in which the digital gradation method is combined with thetime gradation method is used, as configurations of a pixel in asemiconductor device, there are configurations shown in FIGS. 4A and 4B.When a canceling TFT 406 is used in addition to the switching TFT 404and the driving TFT 405, it is possible to sensitively control a lengthof a light emitting time.

On the other hand, an example of a configuration capable of correcting avariation in threshold value of a TFT using another method is proposedin SID 98 DIGEST P11 “Design of an Improved Pixel for a PolysiliconActive-Matrix Organic LED Display”. As shown in FIGS. 5A and 5B, it hasa source signal line 501, first to third gate signal lines 502 to 504,TFTs 505 to 508, capacitor means 509 (C₂) and 510 (C₁), an EL element511, and a current supply line 512.

The gate electrode of the TFT 505 is connected with the first gatesignal line 502, the first electrode thereof is connected with thesource signal line 501, and the second electrode thereof is connectedwith the first electrode of the capacitor means 509. The secondelectrode of the capacitor means 509 is connected with the firstelectrode of the capacitor means 510. The second electrode of thecapacitor means 510 is connected with the current supply line 512. Thegate electrode of the TFT 506 is connected with the second electrode ofthe capacitor means 509 and the first electrode of the capacitor means510, the first electrode thereof is connected with the current supplyline 512, and the second electrode thereof is connected with the firstelectrode of the TFT 507 and the first electrode of the TFT 508. Thegate electrode of the TFT 507 is connected with the second gate signalline 503 and the second electrode thereof is connected with the secondelectrode of the capacitor means 509 and the first electrode of thecapacitor means 510. The gate electrode of the TFT 508 is connected withthe third gate signal line 504 and the second electrode thereof isconnected with the first electrode of the EL element 511. The secondelectrode of the EL element 511 is supplied with a predeterminedpotential through a power source line 513 so that there is a potentialdifference between the second electrode and the current supply line 512.

The operation will be described using FIG. 5B and FIGS. 6A to 6F. FIG.5B shows timing of a video signal and pulses which are inputted to thesource signal line 501 and the first to third gate signal lines 502 to504, and timing is divided into sections of I to VIII according to therespective operations shown in FIGS. 6A to 6F. In addition, according tothe example of the pixel shown in FIG. 5A, it is composed of four TFTsand their polarities each are a P-channel type. Thus, when an L level isinputted to the gate electrode, it is turned ON. When an H level isinput, it is turned OFF.

First, the first gate signal line 502 becomes an L level so that the TFT505 is turned ON. At this time, the third gate signal line is an L levelso that the TFT 508 is in an ON state (section I). Subsequently, thesecond gate signal line becomes an L level so that the TFT 507 is turnedON. Here, as shown in FIG. 6A, the capacitor means 509 and 510 arecharged. Then, when a voltage held by the capacitor means 510 exceeds athreshold value (V_(th)) of the TFT 506, the TFT 506 is turned ON(section II).

Subsequently, the third gate signal line becomes an H level so that theTFT 508 is turned OFF. Then, charges stored in the capacitor means 509and 510 move again, and soon a voltage held by the capacitor means 510becomes equal to V_(th). At this time, as shown in FIG. 6B, respectivepotentials on the current supply line 512 and the source signal line 501are V_(DD). Thus, even in the capacitor means 509, a held voltagebecomes equal to V_(th). Accordingly, the TFT 506 is turned OFF soon.

As described above, when voltages held by the capacitor means 509 and510 become equal to V_(th), the second gate signal line 503 becomes an Hlevel so that the TFT 507 is turned OFF (section IV). By suchoperations, as shown in FIG. 6C, V_(th) is held in the capacitor means.

At this time, with respect to a charge Q₁ stored in the capacitor means510 (C₁), a relation indicated by Equation 1 is held. Simultaneously,with respect to a charge Q₂ stored in the capacitor means 509 (C₂), arelation indicated by Equation 2 is held.

Q ₁ =C ₁ ×|V _(th)|  (Equation 1)

Q ₂ =C ₂ ×|V _(th)|  (Equation 2)

Subsequently, as shown in FIG. 6D, a video signal is inputted (sectionV). The video signal is outputted to the source signal line 501 and itspotential is changed from V_(DD) to a potential of the video signalV_(Data) (here, assume that V_(DD)>V_(Data) because the TFT 506 is aP-channel type). At this time, when a potential of the gate electrode ofthe TFT 506 is given by V_(P) and a charge in the node is given by Q,relations indicated by Equations 3 and 4 are held from chargeconservation law, including the capacitor means 509 and 510.

Q+Q ₁ =C ₁×(V _(DD) −V _(P))  (Equation 3)

Q−Q ₂ =C ₂×(V _(P) −V _(Data))  (Equation 4)

Based on Equations 1 to 4, the potential V_(p) of the gate electrode ofthe TFT 506 is indicated by Equation 5.

$\begin{matrix}{V_{P} = {{\frac{C_{1}}{C_{1} + C_{2}}V_{DD}} + {\frac{C_{2}}{C_{1} + C_{2}}V_{Data}} - {{/V_{th}}/}}} & \left( {{Equation}\mspace{14mu} 5} \right)\end{matrix}$

Thus, a voltage V_(GS) between the gate and the source of the TFT 506 isindicated by Equation 6.

$\begin{matrix}\begin{matrix}{V_{GS} = {V_{P} - V_{DD}}} \\{= {{\frac{C_{2}}{C_{1} + C_{2}}\left( {V_{Data} - V_{DD}} \right)} - {{/V_{th}}/}}} \\{= {{\frac{C_{2}}{C_{1} + C_{2}}\left( {V_{Data} - V_{DD}} \right)} + V_{th}}}\end{matrix} & \left( {{Equation}\mspace{14mu} 6} \right)\end{matrix}$

The term of V_(th) is included in the right side of Equation 6. In otherwords, the threshold value of the TFT 506 in the pixel is added to thevideo signal inputted from the source signal line and the resultantsignal is held by the capacitor means 510.

When the input of the video signal is completed, the first gate signalline 502 becomes an H level so that the TFT 505 is turned OFF (sectionVI). After that, the source signal line is returned to a predeterminedpotential (section VII). By the above operation, write operation of thevideo signal into the pixel is completed (FIG. 6E).

Subsequently, the third gate signal line becomes an L level so that theTFT 508 is turned ON. Thus, as shown in FIG. 6F, a current flows intothe EL element so that the EL element emits light. At this time, a valueof the current flowing into the EL element depends on a voltage betweenthe gate and the source of the TFT 506 and a drain current I_(DS)flowing into the TFT 506 is indicated by Equation 7.

$\begin{matrix}\begin{matrix}{I_{DS} = {\frac{\beta}{2}\left( {V_{GS} - V_{th}} \right)^{2}}} \\{= {\frac{\beta}{2}\left\{ {\frac{C_{2}}{C_{1} + C_{2}}\left( {V_{Data} - V_{DD}} \right)} \right\}^{2}}}\end{matrix} & \left( {{Equation}\mspace{14mu} 7} \right)\end{matrix}$

From Equation 7, it is apparent that the drain current I_(DS) of the TFT506 does not depend on the threshold value V_(th). Thus, even in thecase where the threshold value of the TFT 506 is varied, the value iscorrected for each pixel and added to the video signal. Accordingly, itis apparent that a current depending on the potential V_(DATA) of thevideo signal flows into the EL element.

However, in the case of the above configuration, when capacitance valuesof the capacitor means 509 and 510 are varied, the drain current I_(DS)of the TFT 506 is varied.

SUMMARY OF THE INVENTION

Therefore, an object of the present invention is to provide asemiconductor device using a pixel having a configuration capable ofcorrecting a variation in threshold value of a TFT by using aconfiguration that is hard to be influenced by a variation incapacitance value.

According to the above method, the drain current I_(DS) of the TFT 506depends on the capacitance values of two capacitor means 509 and 510. Inother words, when a state in which the threshold value is held (FIG. 6C)is shifted to writing of a video signal (FIG. 6D), charges move betweencapacitor means C₁ and C₂. That is, a voltage between both electrodes ofC₁ and a voltage between both electrodes of C₂ are changed at shiftingfrom a state of FIG. 6C to that of FIG. 6D. At this time, when there arevariations in capacitance values of C₁ and C₂, the voltage between bothelectrodes of C₁ and the voltage between both electrodes of C₂ are alsovaried. According to the present invention, the threshold value is addedto the video signal without being processed so that it can be corrected.Thus, in a process in which the video signal is inputted after thethreshold value is stored in the capacitor means, charges do not movebetween the capacitor means and voltages between both electrodes of thecapacitor means are not changed. Accordingly, it can be prevented thatthe drain current is influenced by variations in capacitance values.

The constitutions of the present invention are indicated below.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a current supply line; first to third transistorseach having a gate electrode and first and second electrodes; andcapacitor means having first and second electrodes;

the first electrode of the capacitor means is electrically connectedwith the gate electrode of the first transistor and the first electrodeof the second transistor;

the second electrode of the second transistor is electrically connectedwith the first electrode of the first transistor and the first electrodeof the third transistor;

during a first period, the second and third transistors are turned on sothat a charge is stored in the capacitor means through the first andsecond transistors;

during a second period, the third transistors is turned off and thesecond transistor is turned on so that a voltage held by the capacitormeans is made equal to a threshold voltage of the first transistor;

during a third period, the second and third transistors are turned offso that a video signal is inputted through the second electrode of thecapacitor means; and

during a fourth period, the second transistors is turned off and thethird transistor is turned on so that a current flows between a sourceand a drain of each of the first and third transistors.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to third gate signallines; a current supply line; first to fourth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor and the first electrodeof the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the third transistorand the first electrode of the fourth transistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line; and

the gate electrode of the fourth transistor is electrically connectedwith the third gate signal line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to fourth gate signallines; a current supply line; first to fifth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor and the first electrodeof the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the third transistorand the first electrode of the fourth transistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the gate electrode of the fourth transistor is electrically connectedwith the third gate signal line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement; and

the gate-electrode of the fifth transistor is electrically connectedwith the fourth gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the capacitormeans and the second electrode of the second transistor.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to third gate signallines; a current supply line; first to fifth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor and the first electrodeof the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the third transistorand the first electrode of the fourth transistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the gate electrode of the fourth transistor is electrically connectedwith the first gate signal line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement; and

the gate electrode of the fifth transistor is electrically connectedwith the third gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the capacitormeans and the second electrode of the second transistor.

A semiconductor device according to the present invention as describedabove is characterized in that the first transistor and the fourthtransistor have polarities opposite to each other.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to third gate signallines; a current supply line; first to fifth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode ofthe fourth transistor, and the first electrode of the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the third transistorand the first electrode of the fifth transistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the second electrode of the fourth transistor is electrically connectedwith the first electrode of the light emitting element; and

the gate electrode of the fifth transistor is electrically connectedwith the third gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the secondtransistor and the second electrode of the third transistor.

A semiconductor device according the present invention as describedabove is characterized in that the second transistor and the fourthtransistor have the same polarity.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to third gate signallines; a current supply line; first to fifth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode ofthe fourth transistor, and the first electrode of the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the thirdtransistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the first electrode of the fourth transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement; and

the gate electrode of the fifth transistor is electrically connectedwith the third gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the secondtransistor and the second electrode of the third transistor.

A semiconductor device according to the present invention as describedabove is characterized in that the second transistor and the fourthtransistor have the same polarity.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to fourth gate signallines; a current supply line; first to sixth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode ofthe fourth transistor, and the first electrode of the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the thirdtransistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the first electrode of the fourth transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement;

the gate electrode of the fifth transistor is electrically connectedwith the third gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the secondtransistor and the second electrode of the third transistor; and

the gate electrode of the sixth transistor is electrically connectedwith the fourth gate signal line, the first electrode thereof iselectrically connected with the current supply line, and the secondelectrode thereof is electrically connected with the gate electrode ofthe fourth transistor.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to fourth gate signallines; a current supply line; first to sixth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode ofthe fourth transistor, and the first electrode of the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the thirdtransistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the first electrode of the fourth transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement;

the gate electrode of the fifth transistor is electrically connectedwith the third gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the secondtransistor and the second electrode of the third transistor; and

the gate electrode of the sixth transistor is electrically connectedwith the fourth gate signal line, the first electrode thereof iselectrically connected with the current supply line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to fourth gate signallines; a current supply-line; first to sixth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode ofthe fourth transistor, and the first electrode of the third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the thirdtransistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the first electrode of the fourth transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement;

the gate electrode of the fifth transistor is electrically connectedwith the third gate signal line and the first electrode thereof iselectrically connected with one of the second electrode of the secondtransistor and the second electrode of the third transistor; and

the gate electrode of the sixth transistor is electrically connectedwith the fourth gate signal line and provided between the current supplyline and the first electrode of the fourth transistor or between thesecond electrode of the fourth transistor and the first electrode of thelight emitting element.

A semiconductor device according to the present invention as describedabove is characterized in that the semiconductor device has a functionfor inputting a pulse to the fourth gate signal line to turn on thesixth transistor so that a voltage between a gate and a source of thefourth transistor is set to zero.

A semiconductor device according to the present invention as describedabove is characterized by including a function for inputting a pulse tothe fourth gate signal line to turn on the sixth transistor so that acharge held in the capacitor means is released.

A semiconductor device according to the present invention as describedabove is characterized by including a function for inputting a pulse tothe fourth gate signal line to turn off the sixth transistor so that acurrent supplied from the current supply line to the light emittingelement is cut off.

A semiconductor device according to the present invention as describedabove is characterized in that the second transistor and the fourthtransistor have the same polarity.

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel comprises: a source signal line; first to fourth gate signallines; a current supply line; first to sixth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means and the first electrode of the fifth transistor;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode andthe first electrode of the fifth transistor, and the first electrode ofthe third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the third transistorand the first electrode of the fourth transistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the gate electrode of the fourth transistor is electrically connectedwith the third gate signal line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement; and

the gate electrode of the sixth transistor is electrically connectedwith the fourth gate signal line and provided between the firstelectrode of the capacitor means and the first electrode of the fifthtransistor, between the first electrode of the third transistor and thesecond electrode of the fifth transistor, or between the first electrodeof the third transistor and the gate electrode of the fifth transistor

A semiconductor device according to the present invention includes apixel provided with a light emitting element, in which:

the pixel includes: a source signal line; first to third gate signallines; a current supply line; first to sixth transistors each having agate electrode and first and second electrodes; capacitor means havingfirst and second electrodes; and a light emitting element having a firstelectrode;

the gate electrode of the first transistor is electrically connectedwith the first gate signal line, the first electrode thereof iselectrically connected with the source signal line, and the secondelectrode thereof is electrically connected with the first electrode ofthe capacitor means and the first electrode of the fifth transistor;

the second electrode of the capacitor means is electrically connectedwith the gate electrode of the second transistor, the gate electrode andthe first electrode of the fifth transistor, and the first electrode ofthe third transistor;

the first electrode of the second transistor is electrically connectedwith the current supply line and the second electrode thereof iselectrically connected with the second electrode of the third transistorand the first electrode of the fourth transistor;

the gate electrode of the third transistor is electrically connectedwith the second gate signal line;

the gate electrode of the fourth transistor is electrically connectedwith the third gate signal line and the second electrode thereof iselectrically connected with the first electrode of the light emittingelement; and

the gate electrode of the sixth transistor is electrically connectedwith the second gate signal line and provided between the firstelectrode of the capacitor means and the first electrode of the fifthtransistor, between the first electrode of the third transistor and thesecond electrode of the fifth transistor, or between the first electrodeof the third transistor and the gate electrode of the fifth transistor.

A semiconductor device according to the present invention ischaracterized in that the third transistor and the sixth transistor havethe same polarity.

A semiconductor device according to the present invention ischaracterized in that a second electrode of the light emitting elementis electrically connected with a power source line having a potentialwith a potential difference relative to the current supply line.

A semiconductor device according to the present invention ischaracterized in that the second electrode of the fifth transistor iselectrically connected with a power source line having a potential witha potential difference relative to the current supply line.

A semiconductor device according to the present invention ischaracterized in that the second electrode of the fifth transistor iselectrically connected with one of the gate signal lines except the gatesignal line for controlling the pixel.

A semiconductor device according to the present invention ischaracterized in that the pixel further includes storage capacitor meansfor holding a video signal inputted inputted from the source signalline, which is provided between the second electrode of the firsttransistor and a predetermined potential.

According to the present invention, there is provided a method ofdriving a semiconductor device having a pixel provided with a lightemitting element, in which the pixel includes at least a source signalline, a current supply line, a transistor for supplying a predeterminedcurrent to the light emitting element, a light emitting element, andcapacitor means,

the method including:

a first step of storing a charge in the capacitor means;

a second step of converging a voltage between both electrodes of thecapacitor means to a voltage equal to a threshold voltage of thetransistor;

a third step of inputting a video signal from the source signal line;and

a fourth step of adding the threshold voltage to a potential of thevideo signal and applying an added voltage to a gate electrode of thetransistor so that a current is supplied to the light emitting elementthrough the transistor to emit light,

wherein at least in the third step, the voltage between both electrodesof the capacitor means is constant.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B are a diagram showing a pixel configuration of asemiconductor device and a timing chart thereof in accordance with anembodiment mode of the present invention;

FIGS. 2A to 2F are explanatory diagrams for driving of a pixel shown inFIG. 1A;

FIG. 3 shows a configuration example of a pixel of a commonly usedsemiconductor device;

FIGS. 4A and 4B show configurations of a pixel in the case where it isdriven by a time gradation method using a digital video signal;

FIGS. 5A and 5B are a diagram showing a configuration of a pixel capableof correcting a variation in threshold value and a timing chart thereof;

FIGS. 6A to 6F are explanatory diagrams for driving of the pixel shownin FIG. 5A;

FIGS. 7A to 7C show a configuration example of an analog video signalinput type semiconductor device in accordance with an embodiment of thepresent invention;

FIGS. 8A and 8B show configuration examples of a source signal linedriver circuit and a gate signal line driver circuit in thesemiconductor device shown in FIGS. 7A to 7C;

FIGS. 9A and 9B show a configuration example of a digital video signalinput type semiconductor device in accordance with an embodiment of thepresent invention;

FIGS. 10A and 10B show configuration examples of a source signal linedriver circuit in the semiconductor device shown in FIGS. 9A and 9B;

FIGS. 11A and 11B show a configuration example of a gate signal linedriver circuit, which is different from the configuration shown in FIG.8B;

FIG. 12 is an explanatory diagram for pulse output timing of the gatesignal line driver circuit shown in FIGS. 11A and 11B;

FIGS. 13A to 13D show step examples of manufacturing a semiconductordevice;

FIGS. 14A to 14D show step examples of manufacturing the semiconductordevice;

FIGS. 15A to 15D show step examples of manufacturing the semiconductordevice;

FIGS. 16A to 16C are an outer appearance view and cross sectional viewsof a semiconductor device;

FIGS. 17A to 17H show examples of electronic devices to which thepresent invention can be applied;

FIGS. 18A and 18B are a diagram showing a pixel configuration of asemiconductor device and a timing chart thereof in accordance with anembodiment of the present invention;

FIGS. 19A to 19F are explanatory diagrams for driving of the pixel shownin FIG. 18A;

FIGS. 20A and 20B show a pixel configuration of a semiconductor deviceand operation thereof in accordance with an embodiment of the presentinvention;

FIGS. 21A to 21C show a pixel configuration of a semiconductor device inaccordance with an embodiment of the present invention;

FIGS. 22A to 22C show a pixel configuration of a semiconductor device inaccordance with an embodiment of the present invention;

FIGS. 23A to 23C show a pixel configuration of a semiconductor device inaccordance with an embodiment of the present invention;

FIGS. 24A and 24B show an example of operational timing in the casewhere the semiconductor device of the present invention is driven;

FIGS. 25A and 25B are explanatory diagrams for principle of operation ofa circuit in a conventional example and the present invention;

FIGS. 26A and 26B show a configuration example of a current sourcecircuit using threshold value correction principle of the presentinvention and a timing chart thereof;

FIGS. 27A and 27B show a configuration example of a current sourcecircuit using the threshold value correction principle of the presentinvention and a timing chart thereof;

FIGS. 28A and 28B show a configuration example of a current sourcecircuit using the threshold value correction principle of the presentinvention and a timing chart thereof;

FIGS. 29A and 29B show a configuration example of a current sourcecircuit using the threshold value correction principle of the presentinvention and a timing chart thereof; and

FIGS. 30A and 30B show a configuration example of a current sourcecircuit using the threshold value correction principle of the presentinvention and a timing chart thereof.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1A shows an embodiment mode of the present invention. A pixelincludes a source signal line 101, first to third gate signal lines 102to 104, first to fourth TFTs 105 to 108, capacitor means 109, an ELelement 110, a current supply line 111, and a power source line 112.

The gate electrode of the first TFT 105 is connected with the first gatesignal line 102, the first electrode thereof is connected with thesource signal line 101, and the second electrode thereof is connectedwith the first electrode of the capacitor means 109. The secondelectrode of the capacitor means 109 is connected with the gateelectrode of the second TFT 106 and the first electrode of the third TFT107. The first electrode of the second TFT 106 is connected with thecurrent supply line 111 and the second electrode thereof is connectedwith the second electrode of the third TFT 107 and the first electrodeof the fourth TFT 108. The gate electrode of the third TFT 107 isconnected with the second gate signal line 103. The gate electrode ofthe fourth TFT 108 is connected with the third gate signal line 104 andthe second electrode thereof is connected with the first electrode ofthe EL element 110. The second electrode of the EL element 110 isprovided with a predetermined potential through the power source line112 so that there is a potential difference between the second electrodeand the current supply line 111. In addition, as shown by a dotted linein FIG. 1A, capacitor means 113 may be provided between the secondelectrode of the first TFT 105 and the current supply line 111 to use itas a capacitor for holding a video signal.

The operation will be described using FIG. 1B and FIGS. 2A to 2F. FIG.1B shows timing of a video signal and pulses which are inputted to thesource signal line 101 and the first to third gate signal lines 102 to104, and the timing is divided into sections of I to VIII according tothe respective operations shown in FIGS. 2A to 2F. In addition,according to the configuration shown in FIG. 1A, the first TFT 105 andthe third TFT 107 each are an N-channel type and the second TFT 106 andthe fourth TFT 108 each are a P-channel type. As shown in FIG. 5A, itcan be composed of only the P-channel TFTs. However, since the first TFT105 and the third TFT 107 are used as merely switching elements, one ofboth polarities may be used. Here, an N-channel type is used. In theN-channel TFT, when an H level is inputted to the gate electrode, it isturned ON. When an L level is input, it is turned OFF. In the P-channelTFT, when an L level is inputted to the gate electrode, it is turned ON.When an H level is input, it is turned OFF.

First, the first gate signal line 102 becomes an H level so that thefirst TFT 105 is turned ON (section I). Subsequently, the second gatesignal line 103 becomes an H level and the third gate signal line 104becomes an L level so that the third TFT 107 and the fourth TFT 108 areturned ON (section II). Here, as shown in FIG. 2A, the capacitor means109 is charged, and when a voltage held by the capacitor means 109exceeds a threshold value (V_(th)) of the second TFT 106, the second TFT106 is turned ON.

Subsequently, as shown in FIG. 2B, the third gate signal line 104becomes an H level so that the fourth TFT 108 is turned OFF. Then,charges stored in the capacitor means 109 move again, and soon a voltageheld by the capacitor means 109 becomes equal to V_(th). In other words,a voltage between the gate and the source of the second TFT 106 becomesequal to V_(th) so that the second TFT 106 is turned OFF (section III).

After that, the second gate signal line 103 becomes an L level so thatthe third TFT 107 is turned OFF (section IV). By such operation, asshown in FIG. 2C, V_(th) is held in the capacitor means 109.

Subsequently, as shown in FIG. 2D, a video signal is inputted (sectionV). The video signal is outputted to the source signal line 101 and itspotential is changed from V_(DD) to a potential of the video signalV_(Data) (here, assume that V_(DD)>V_(Data) in the case where light isemitted from the EL element because the second TFT 106 is a P-channeltype). Here, previous V_(th) is held in the capacitor means 109 withoutbeing changed so that charges stored in the capacitor means 109 do notmove. Thus, a voltage between both electrodes of the capacitor means 109is not changed. Accordingly, a potential of the gate electrode of thesecond TFT 106 become a potential obtained by adding the threshold valueV_(th) to the potential of the video signal V_(Data) inputted from thesource signal line 101. Here, the TFT 106 is a P-channel type and thethreshold value V_(th) is a negative value. Thus, the potential actuallybecomes a value smaller than V_(Data) by |V_(th)|. Accordingly, thesecond TFT 106 is turned ON (section V).

Then, when writing of the video signal is completed, as shown in FIG.2E, the first gate signal line 102 becomes an L level so that the firstTFT 105 is turned OFF (section VI). After that, the output of the videosignal to the source signal line is also completed and its potential isreturned to VDD (section VII).

Subsequently, the third gate signal line 104 becomes an L level so thatthe fourth TFT 108 is turned ON. Thus, as shown in FIG. 2F, a currentflows into the EL element so that the EL element emits light (sectionVIII). At this time, a value of the current flowing into the EL elementdepends on a voltage between the gate and the source of the second TFT106, and the voltage between the gate and the source is(V_(DD)−(V_(Data)+V_(th))). Here, even if the threshold value V_(th) ofthe second TFT 106 is varied among the second TFTs 106 of respectivepixels, a voltage corresponding to the variation is held in thecapacitor means 109 of the respective pixels. Thus, there is no casewhere the intensity of the EL element 110 is influenced by the variationin threshold value.

By the above-mentioned operation, processing from writing of the videosignal to light emission is conducted. According to the presentinvention, the potential of the video signal can be offset by thethreshold value of the second TFT 106 by capacitive coupling of thecapacitor means 109. In other words, it does not depend on a capacitanceof the capacitor means 109. Thus, the threshold value correction can beaccurately conducted without being influenced by, for example,variations in characteristics of other elements as described above.

FIGS. 25A and 25B are brief explanatory diagrams of operations forthreshold value correction according to a conventional example and thepresent invention. In FIG. 25A, when the video signal is inputted,charges are stored in the two capacitor means C₁ and C₂ and the movementof the charges is generated therebetween. Thus, a voltage V_(GS) betweenthe gate and the source of the TFT which supplies a current to the ELelement is indicated by the equation including the term of thecapacitance values C₁ and C₂ as shown in (iii) in FIG. 25A. Therefore,when variations in capacitance values C₁ and C₂ are caused, the voltageV_(GS) between the gate and the source of the TFT is varied.

In contrast to this, in the case of the present invention, charges arestored in the capacitor means, but when the video signal is inputted,the movement of charges does not occur. In other words, a potentialobtained by adding a threshold voltage to a potential of the videosignal is applied to the gate electrode of the TFT as it is. Thus, avariation in voltage between the gate and the source of the TFT can befurther suppressed.

Note that, in the case of charging as shown in FIG. 2B, it isunnecessary to store charges which are exactly equal to V_(th) in thecapacitor means 109. In the case of about |V_(th)|+α, it is unnecessaryto exactly turn OFF the second TFT 106. It is preferable that a voltageenough to conduct correction of a variation in threshold value of a TFTfor each pixel is held.

Note that the polarity of the TFT in the configuration indicated in thisembodiment mode is merely an example, and it is appended that thepolarity is not limited.

EMBODIMENTS

Hereafter, the embodiments of the invention will be described.

Embodiment 1

In this embodiment, the configuration of a semiconductor device in whichanalog video signals are used for video signals for display will bedescribed. A configuration example of the semiconductor device is shownin FIG. 7A. The device has a pixel portion 702 wherein a plurality ofpixels is arranged in a matrix shape over a substrate 701, and it has asource signal line driver circuit 703 and first to third gate signalline driver circuits 704 and 706 around the pixel portion. In FIG. 7A,three gate signal line driver circuits are used, which control first tothird gate signal lines of pixels shown in FIG. 1.

Signals inputted to the source signal line driver circuit 703, and thefirst to third gate signal line driver circuits 704 and 706 are providedfrom outside through a flexible printed circuit (FPC) 707.

FIG. 7B shows a configuration example of the source signal line drivercircuit. This is the source signal line driver circuit for using analogvideo signals for video signals for display, which has a shift register711, a buffer 712, and a sampling circuit 713. Not shown particularly,but a level shifter may be added if necessary.

The operation of the source signal line driver circuit will bedescribed. FIG. 8A shows the more detailed configuration, thus referringto the drawing.

A shift register 801 is formed of a plurality of flip-flop circuits (FF)802, to which the clock signal (S-CLK), the clock inverted signal(S-CLKb), and the start pulse (S-SP) are inputted. In response to thetiming of these signals, sampling pulses are outputted sequentially.

The sampling pulses outputted from the shift register 801 are passedthrough a buffer 803 etc. and amplified, and then inputted to a samplingcircuit. The sampling circuit 804 is formed of a plurality of samplingswitches (SW) 805, which samples video signals in a certain column inaccordance with the timing of inputting the sampling pulses. Morespecifically, when the sampling pulses are inputted to the samplingswitches, the sampling switches 805 are turned on. The potential held bythe video signals at this time is outputted to the respective sourcesignal lines through the sampling switches.

Subsequently, the operation of the gate signal line driver circuit willbe described. FIG. 8B shows the more detailed configuration of the firstand second gate signal line driver circuits 704 and 705 shown in FIG.7C. The first gate signal line driver circuit has a shift registercircuit 811, and a buffer 812, which is driven in response to the clocksignal (G-CLK1), the clock inverted signal (G-CLKb1), and the startpulse (G-SP1). The second gate signal line driver circuit has a shiftregister circuit 813 and a buffer 814, which is driven in response tothe clock signal (G-CLK2), the clock inverted signal (G-CLKb2), and thestart pulse (G-SP2).

The operation from the shift register to the buffer is the same as thatin the source signal line driver circuit. The sampling pulses amplifiedby the buffer select respective gate signal lines for them. The firstgate signal line driver circuit sequentially selects first gate signallines G₁₁, G₂₁, . . . and G_(m1), and the second gate signal line drivercircuit sequentially selects second gate signal lines G₁₂, G₂₂, . . .and G_(m2). A third gate signal line driver circuit, not shown, is alsothe same as the first and second gate signal line driver circuits,sequentially selecting third gate signal lines G₁₃, G₂₃, . . . andG_(m3). In the selected row, video signals are written in the pixel toemit light according to the procedures described in the embodiment mode.

Note that, as one example of the shift register, that formed of aplurality of flip-flops is shown here. However, such the configurationis acceptable that signal lines can be selected by a decoder and thelike.

Embodiment 2

In this embodiment, a configuration of a semiconductor device in whichdigital video signals are used for video signals for display will bedescribed. FIG. 9A shows a configuration example of the semiconductordevice. The device has a pixel portion 902 wherein a plurality of pixelsis arranged in a matrix shape over a substrate 901, and it has a sourcesignal line driver circuit 903, and first to third gate signal linedriver circuits 904 to 906 around the pixel portion. In FIG. 9A, threegate signal line driver circuits are used, which control first to thirdgate signal lines of pixels shown in FIG. 1.

Signals inputted to the source signal line driver circuit 903, and thefirst to third gate signal line driver circuits 904 to 906 are suppliedfrom outside through a flexible printed circuit (FPC) 907.

FIG. 9B shows a configuration example of the source signal line drivercircuit. This is the source signal line driver circuit for using digitalvideo signals for video signals for display, which has a shift register911, a first latch circuit 912, a second latch circuit 913, and a D/Aconverter circuit 914. Not shown in the drawing particularly, but alevel shifter may be added if necessary.

The first to third gate signal line driver circuits 904 to 906 can besame as those shown in Embodiment 1, thus omitting the illustration anddescription here.

The operation of the source signal line driver circuit will bedescribed. FIG. 10A shows the more detailed configuration, thusreferring to the drawing.

A shift register 1001 is formed of a plurality of flip-flop circuits(FF) 1010 or the like, to which the clock signal (S-CLK), the clockinverted signal (S-CLKb), and the start pulse (S-SP) are inputted.Sampling pulses are sequentially outputted in response to the timing ofthese signals.

The sampling pulses outputted from the shift register 1001 are inputtedto first latch circuits 1002. Digital video signals are being inputtedto the first latch circuits 1002. The digital video signals are held ateach stage in response to the timing of inputting the sampling pulses.Here, the digital video signals are inputted by three bits. The videosignals at each bit are held in the respective first latch circuits.Here, three first latch circuits are operated in parallel by onesampling pulse.

When the first latch circuits 1002 finish to hold the digital videosignals up to the last stage, latch pulses are inputted to second latchcircuits 1003 during the horizontal retrace period, and the digitalvideo signals held in the first latch circuits 1002 are transferred tothe second latch circuits 1003 all at once. After that, the digitalvideo signals held in the second latch circuits 1003 for one row areinputted to D/A converter circuits 1004 simultaneously.

While the digital video signals held in the second latch circuits 903are being inputted to a constant current circuit 904, the shift register901 again outputs sampling pulses. Subsequent to this, the operation isrepeated to process the video signals for one frame.

The D/A converter circuits 1004 convert the inputted digital videosignals from digital to analog and output them to the source signallines as the video signals having the analog voltage.

The operation described above is conducted throughout the stages duringone horizontal period. Accordingly, the video signals are outputted tothe entire source signal lines.

Note that, as described in the Embodiment 1, such the configuration isacceptable that a decoder or the like is used instead of the shiftregister to select signal lines.

Embodiment 3

In Embodiment 2, the digital video signal is subjected todigital-to-analog conversion by the D/A converter circuit and writteninto the pixel. The semiconductor device of the present invention canalso conduct gradation representation by a time gradation method. Inthis case, as shown in FIG. 10B, the D/A converter circuit is notrequired and the gradation representation is controlled according to alength of a light emitting time of the EL element. Thus, it isunnecessary to parallel-process video signals of respective bits so thatthe first and second latch circuits each may also have one bit. At thistime, with respect to the digital video signal, each bit is seriallyinputted, held in succession in the latch circuit, and written into thepixel.

Also, when the gradation representation is conducted by a time gradationmethod, the fourth TFT 108 can be used as the canceling TFT in FIG. 1.In this case, it is required that the fourth TFT 108 is turned OFFduring a canceling period. Thus, the third gate signal line 104 iscontrolled by a canceling gate signal line driver circuit. In general,in the case of the gate signal line driver circuit for selecting thegate signal line, it outputs one or plural pulses during one horizontalperiod. In the case of the canceling gate signal line driver circuit, itis required that the fourth TFT 108 is continuously turned OFF during acanceling period. Thus, a separate driver circuit is used.

Embodiment 4

According to the semiconductor devices described so far, the first tothird gate signal lines are controlled by operating the first to thirdgate signal line driver circuits, respectively. As a merit of such aconfiguration, there is a point that it is adaptable to various drivemethods to some degree because selective timings of the respective gatesignal lines can be independently changed. However, an occupying area ofthe driver circuit on the substrate is increased. Thus, there is ademerit that a peripheral area of a display region becomes larger, thatis, it becomes difficult to narrow a frame region.

FIG. 11A shows a configuration example for solving such a problem. InFIG. 11A, as in the gate signal line driver circuit used in otherembodiments, it has the shift register 1101 and the buffer 1102. In thisembodiment, a pulse dividing circuit 1103 is added after the buffer. Adetailed configuration is shown in FIG. 11B.

The pulse dividing circuit 1103 is composed of a plurality of NANDs 1116and a plurality of inverters 1107. The buffer output and a divisionsignal (MPX) inputted from the outside are NANDed so that two gatesignal lines can be controlled according to different pulses by a singlegate signal line driver circuit. In the case of FIGS. 11A and 11B, thefirst gate signal line and the second signal line are controlled by thesingle gate signal line driver circuit.

FIG. 12 shows the division signal (MPX) and timing for selecting therespective gate signal lines. In the respective first gate signal linesG₁₁, G₂₁, . . . , G_(m1), the buffer output is used as a selective pulsewithout being processed. On the other hand, when the buffer output is anH level and the division signal is an H level, the output of the NANDbecomes an L level and then an H-level is outputted through theinverter. The second gate signal lines G₁₂, G₂₂, . . . , G_(m2) areselected in accordance with such pulses.

In this embodiment, the example in which the first gate signal line andthe second signal line are controlled by the single gate signal linedriver circuit is described. When the same method is used, the first tothird gate signal lines can be also controlled by a single gate signalline driver circuit.

Embodiment 5

FIGS. 24A and 24B are timing charts for actually driving thesemiconductor device of the present invention. FIG. 24A schematicallyshows timing of operation and FIG. 24B shows timing of pulses inputtedto the first to third gate signal lines in FIG. 1A. Here, respectiveTFTs controlled through the first and second gate signal lines are anN-channel type, and when the potential thereof is an H level, they areturned ON. When the potential thereof is an L level, they are turnedOFF. In addition, a TFT controlled through the third gate signal line isa P-channel type, and when the potential thereof is an H level, it isturned OFF. When the potential thereof is an L level, it is turned ON.Of course, the polarity of the TFT is not limited to this.

When it is driven by an analog gradation method, a period indicated by2400 is one frame period. When it is driven by a digital time gradationmethod, the period indicated by 2400 is one sub-frame period. Inaddition, a period indicated by 2402 corresponds to the period shown inFIG. 1B. The timing of operation shown in FIG. 24A also depends on thatin FIG. 1B.

Note that period indicated by particularly the sections VI and II inFIG. 1B are not necessarily provided. In other words, the input of thevideo signal is completed immediately after the TFT 101 is turned OFF,and then the TFT 108 is turned ON. Thus, it may be shifted to a lightemitting period. Timing in FIG. 24B depends on such operation.

The pulses inputted to the respective gate signal lines may be generatedby respective separate driver circuits. Alternatively, as shown in FIGS.11A and 11B, another pulse may be generated from a pulse by using thepulse dividing circuit.

Also, a method described in Japanese Patent Application No. 2001-063419is used and a gate signal line selection period is divided into aplurality of sub-periods, for example, two periods of the first half andthe second half. Then, the following may be conducted. During oneperiod, a potential on the source signal line is set to V_(DD) and athreshold value is held in a line (which is set to i-th line). Duringthe other period, the video signal is inputted to the source signal line(V_(DD) V_(Data)) and writing of the video signal is conducted in anyline except the i-th line. By such operations, a period for whichoperation for holding a threshold value can be provided to be long sothat a margin is provided for circuit operation.

Embodiment 6

In the present invention, it is desirable that the TFT for supplying acurrent to the EL element at light emission (TFT 106 in FIG. 1A) isoperated in a saturation region because a variation in intensity due todeterioration of the EL element is suppressed. When the TFT operates inthe saturation region, a change in drain current in the case where avoltage between the gate and the source is somewhat changed can besuppressed. Thus, a gate length L is set long.

In this time, according to the operation in the case where the thresholdvalue is held by the capacitor means, a voltage which exceeds thethreshold value of the TFT is applied to the capacitor means once andfrom this state, it is converged to the threshold voltage. When the gatelength L of the TFT is long, a time is required for this operationaccording to a gate capacitance and the like. Thus, in this embodiment,a configuration in which operation of converging the amount of charge inthe capacitor means is conducted at high speed in such a case will bedescribed.

FIG. 18A shows a configuration of a pixel. TFTs 1810 and 1811 and afourth gate signal line 1805 for controlling the TFT 1811 are added tothe pixel shown in FIG. 1A. In addition, as shown by a dotted line inFIG. 18A, capacitor means 1816 may be provided between the secondelectrode of a first TFT 1806 and a current supply line 1814 to use itas a capacitor for holding a video signal.

The operation will be described using FIG. 18B and FIGS. 19A to 19F.FIG. 18B shows timing of a video signal and pulses which are inputted toa source signal line 1801 and first to fourth gate signal lines 1802 to1805, and timing is divided into sections of I to VIII according to therespective operations shown in FIGS. 19A to 19F. In this embodiment, astructure is adopted in which the operation is conducted until thethreshold voltage is held by the capacitor means at high speed. Thus,writing of a video signal and light emitting operation are conducted asdescribed in the embodiment mode. Thus, only charging and holdingoperations of the capacitor means will be described here.

First, the first gate signal line 1802 becomes an H level so that theTFT 1806 is turned ON (section I). Subsequently, the second gate signalline 1803 and the fourth gate signal line 1805 each become an H leveland the third gate signal line 1804 becomes an L level so that TFTs1808, 1809, and 1811 are turned ON. Here, as shown in FIG. 19A,capacitor means 1812 is charged. Then, when a voltage held by thecapacitor means 1812 exceeds threshold values (V_(th)) of TFTs 1807 and1810, the TFTs 1807 and 1810 are turned ON (section II).

Subsequently, as shown in FIG. 19B, the third gate signal line 1804becomes an H level so that the TFT 1809 is turned OFF. Then, chargesstored in the capacitor means 1812 move again, and soon a voltage heldby the capacitor means 1812 becomes equal to V_(th). In other words, avoltage between the gate and the source of each of the TFTs 1807 and1810 becomes equal to V_(th) so that the TFTs 1807 and 1810 are turnedOFF (section III).

Hereinafter, writing of the video signal and light emission areconducted according to the embodiment mode. Here, with respect to thenewly added TFT 1810, the gate electrode is connected with that of theTFT 1807 for supplying a current to an EL element 1813 at lightemission. As shown in FIGS. 19A and 19B, the number of paths throughwhich charges move is larger than that in the embodiment mode and theTFT 1810 does not have a function for supplying a current to the ELelement 1813. Thus, the gate length L may be set short and the channelwidth W may be set wide so that the amount of current can be increased.Therefore, the movement of charge is smoothly conducted because the gatecapacitance is small. Accordingly, a time until a voltage held by thecapacitor means is converged to V_(th) can be further shortened.

As is apparent from the timing chart shown in FIG. 18B, the second gatesignal line 1803 and the fourth gate signal line 1805 each become an Hlevel or an L level at the same timing. Thus, the TFTs controlledthrough these gate signal lines, that is, the TFTs 1808 and 1811 may becontrolled using the same gate signal line. When such control isconducted, an increase in the number of gate signal lines required forcontrolling a pixel can be suppressed.

Note that the TFT 1811 shown in FIG. 18A is located between the secondelectrode of the TFT 1806 and the first electrode of the TFT 1810. Itmay be located between the second electrode of the TFT 1810 and thefirst electrode of the TFT 1808 or between the gate electrode of the TFT1810 and the first electrode of the TFT 1808.

Also, according to the configuration of this embodiment, it is requiredthat the TFTs 1807 and 1810 are made to have the same polarity. Withrespect to the other TFTs, no limitation is particularly provided.

Note that this embodiment can be also embodied by being combined withanother embodiment.

Embodiment 7

In any case of the pixels shown in FIGS. 1A, 15, and 18A, a currentflows into the EL element during charging of the capacitor means. Thus,the EL element emits light during a period except a light emittingperiod. The light emitting period is extremely short so that an imagequality is not greatly influenced thereby. However, the EL elementitself becomes a load during charging of the capacitor means so that atime is required for charging. In this embodiment, a configuration inwhich, a current does not flow into the EL element at charging of thecapacitor means will be described.

FIG. 20A shows a configuration of a pixel. A TFT 2010 is added to thepixel shown in FIG. 1A. The gate electrode of the TFT 2010 is connectedwith a fourth gate signal line 2005, the first electrode thereof isconnected with the first electrode of a TFT 2009, the second electrodeof a TFT 2007, and the first electrode of a TFT 2008, and the secondelectrode thereof is provided with a predetermined potential so thatthere is a potential difference between the second electrode and acurrent supply line 2013. Here, the second electrode of a TFT 2009preferably has a potential with a potential difference relative to thecurrent supply line 2013. Thus, it may be connected with the gate signalline of another line. In other words, in this case, it is preferablyutilized that a gate signal line which is not in a selection statebecomes a predetermined potential. In addition, as shown by a dottedline in FIG. 20A, capacitor means 2015 may be provided between thesecond electrode of the first TFT 2006 and the current supply line 2013to use it as a capacitor for holding a video signal.

In charging of capacitor means 2011, the TFTs 2006, 2007, 2008, and 2010are turned ON so that the operation is conducted as shown in FIG. 20B.The TFT 2009 is turned OFF so that a current does not flow into the ELelement 2012 and there is no light emission. Even in this case, a paththrough the newly added TFT 2010 exists. Thus, the capacitor means 2011is charged.

In this embodiment, the TFT 2009 is made to have the same polarity asthe TFT 2007 but the configuration is not limited to this. Of course,they may be made to have a P-channel type. Note that, when an apertureratio of a pixel and the like are considered, it is desirable that thenumber of signal lines is minimized. When this point is considered, thegate signal lines 2002 and 2004 may be made common. Note that, in thistime, while the TFT 2006 is turned ON, that is, while holding of thethreshold value and writing of the video signal are conducted, the TFT2009 is turned OFF. Then, when it reaches a light emitting period sothat the TFT 2009 is turned ON, it is required that the TFT 2006 isturned OFF. Thus, when the TFTs 2006 and 2009 are controlled through thecommon gate signal line, the polarities are made opposite to each other.

Note that, as described in this embodiment, the method of preventing acurrent from flowing into the EL element during a period except thelight emitting period can be applied to the other embodiments.

Embodiment 8

In this embodiment, an example in which operation for converging theamount of charge is conducted at high speed using a configurationdifferent from Embodiment 5 will be described.

FIG. 21A shows a configuration example. A pixel includes a source signalline 2101, first to third gate signal lines 2102 to 2104, first to fifthTFTs 2105 to 2109, capacitor means 2110, an EL element 2112, a currentsupply line 2113, and power source lines 2114 and 2115.

The gate electrode of the first TFT 2105 is connected with the firstgate signal line 2102, the first electrode thereof is connected with thesource signal line 2101, and the second electrode thereof is connectedwith the first electrode of the capacitor means 2110. The secondelectrode of the capacitor means 2110 is connected with the gateelectrode of the second TFT 2106, the gate electrode of the fourth TFT2108, and the first electrode of the third TFT 2107. The first electrodeof the second TFT 2106 is connected with the current supply line 2113and the second electrode thereof is connected with the second electrodeof the third TFT 2107 and the first electrode of the fifth TFT 2109. Thegate electrode of the third TFT 2107 is connected with the second gatesignal line 2103. The first electrode of the fourth TFT 2108 isconnected with the current supply line 2113 and the second electrodethereof is connected with the first electrode of the EL element 2112.The gate electrode of the fifth TFT 2109 is connected with the thirdgate signal line 2104, and the second electrode thereof is provided witha predetermined potential through the power source line 2115 so thatthere is a potential difference between the second electrode and thecurrent supply line 2113. The second electrode of the EL element 2112 isprovided with a predetermined potential through the power source line2114 so that there is a potential difference between the secondelectrode and the current supply line 2113. In addition, as shown by adotted line in FIG. 21A, capacitor means 2111 may be provided betweenthe second electrode of the first TFT 2105 and the current supply line2113 to use it as a capacitor for holding a video signal.

The TFT 2108 is a TFT for supplying a current to the EL element 2112 sothat it is preferably operated in a saturation region as describedabove. Thus, a gate length L is set long. However, a time is requiredfor operation for holding a threshold voltage by the capacitor means2110. Accordingly, the operation for holding the threshold voltage isconducted at high speed by using the TFT 2106. The TFT 2106 is not usedfor supplying a current to the EL element 2112 so that the gate length Lmay be set short and the channel width W may be set wide.

In charging, the TFTs 2105, 2107, and 2109 are turned. ON so that acurrent is produced. When a voltage between both electrodes of thecapacitor means 2110 exceeds the threshold values V_(th) of the TFTs2106 and 2108, the TFTs 2106 and 2108 are turned ON (FIG. 21B). Afterthat, when the TFT 2109 is turned OFF, charges stored in the capacitormeans 2110 move and are converged such that the voltage between bothelectrodes becomes equal to V_(th). With respect to the TFT 2106, thegate length L is set short and the channel width W is set wide so thatsuch operation is speedily conducted.

When light is emitted from the pixel, a potential obtained by adding thethreshold value held by the capacitor means 2110 to a video signal issupplied to the gate electrodes of the TFTs 2106 and 2108. Thus, asshown in FIG. 21C, a current flows into the EL element 2112 to emitlight.

By the above procedure, the operation for holding the threshold valuecan be conducted at high speed. In the configuration described in thisembodiment, the capacitor means 2110 holds the threshold values of theTFTs 2106 and 2108. When variations in threshold values of the TFTs 2106and 2108 are caused, if the TFT 2108 is not normally turned OFF, the ELelement 2112 emits light because only the TFT 2108 is located on acurrent path to the EL element 2112. Thus, it is desirable that thesetwo TFTs are located so as to prevent a variation in characteristics.

The configuration described in this embodiment can be applied incombination with another embodiment.

Embodiment 9

In a time gradation method or the like, there is the case whereparticularly a canceling period and the like are provided. Thus, in thisembodiment, a configuration in which a canceling TFT is added and thecanceling period is provided will be described.

FIGS. 22A to 22C show configuration examples of the canceling TFT. Acanceling TFT (sixth TFT) 2202 is controlled through a cancel gatesignal line (fourth gate signal line) 2201. In the case of FIG. 22A, thecanceling TFT 2202 is located between the gate electrode of a TFT 2108and a current supply line 2113. When the canceling TFT 2202 is turnedON, a voltage between the gate and the source of the TFT 2108 becomes 0so that it is turned OFF to stop a current. In the case of FIG. 22B, thecanceling TFT 2202 is located between both electrodes of capacitor means2111 and charges stored in the capacitor means 2111 are released so thatthe TFT 2108 is turned OFF. In the case of FIG. 22C, a method ofdirectly locating the canceling TFT 2202 among the current supply line2113, the TFT 2108, and an EL element 2112 to interrupt a current isused. Here, with respect to the location of the canceling TFT 2202, itmay be located at any position if a current to the EL element 2112 canbe cut off. Specifically, in FIG. 22C, the canceling TFT 2202 is locatedbetween the current supply line 2113 and the TFT 2108. It may be locatedbetween the TFT 2108 and the EL element 2112.

Embodiment 10

According to a configuration shown in FIG. 23A, a TFT 2306 having ashort gate length L and a wide channel width W and a TFT 2308 having along gate length L are connected in series to produce a current path toan EL element 2312. According to such a method, even if the thresholdvalues of the TFTs 2306 and 2308 are different from each other, when anyone of these TFTs is turned OFF with reliability, a current does notflow into the EL element 2312. Further, when the gate length L of theTFT 2308 is made long and it is operated in a saturation region, even ifa voltage between the gate and the source is somewhat varied, it can beprevented that a variation in value of a current flowing into the ELelement 2312 is caused. In addition, according to the configuration ofthis embodiment, with respect to holding of the threshold value, theamount of charge is converged at high speed using the TFT 2306 having ashort gate length L, and the TFTs 2306 and 2308 are used for a doublegate TFT at light emission. This configuration is obtained by applyingtechniques described in Japanese Patent Application Nos. 2001-290287 and2001-304643 by the present inventors.

Embodiment 11

In this specification, a substrate in which a driver circuit including aCMOS circuit and a pixel portion having a switching TFT and a drivingTFT are formed on the same substrate is called an active matrixsubstrate as a matter of convenience. In addition, in this embodiment, aprocess of manufacturing the active matrix substrate will be describedusing FIGS. 13A to 13D and 14A to 14D.

A quartz substrate, a silicon substrate, a metallic substrate, or astainless substrate, in which an insulating film is formed on thesurface thereof is used as a substrate 5000. In addition, a plasticsubstrate having a heat resistance, which is resistant to a processingtemperature in this manufacturing process may be used. In thisembodiment, the substrate 5000 made of glass such as barium borosilicateglass or aluminoborosilicate glass is used.

Next, a base film 5001 made from an insulating film such as a siliconoxide film, a silicon nitride film, or a silicon oxynitride film isformed on the substrate 5000. In this embodiment, a two-layer structureis used for the base film 5001. However, a single layer structure of theinsulating film or a structure in which two layers or more of theinsulating film are laminated may be used.

In this embodiment, as a first layer of the base film 5001, a siliconoxynitride film 5001 a is formed at a thickness of 10 nm to 200 nm(preferably, 50 nm to 100 nm) by a plasma CVD method using SiH₄, NH₃,and N₂O as reactive gases. In this embodiment, the silicon oxynitridefilm 5001 a is formed at a thickness of 50 nm. Next, as a second layerof the base film 5001, a silicon oxynitride film 5001 b is formed at athickness of 50 nm to 200 nm (preferably, 100 nm to 150 nm) by a plasmaCVD method using SiH₄ and N₂O as reactive gases. In this embodiment, thesilicon oxynitride film 5001 b is formed at a thickness of 100 nm.

Subsequently, semiconductor layers 5002 to 5005 are formed on the basefilm 5001. The semiconductor layers 5002 to 5005 are formed as follows.That is, a semiconductor film is formed at a thickness of 25 nm to 80 nm(preferably, 30 nm to 60 nm) by known means (such as a sputteringmethod, an LPCVD method, or a plasma CVD method). Next, thesemiconductor film is crystallized by a known crystallization method(such as a laser crystallization method, a thermal crystallizationmethod using RTA or a furnace anneal furnace, a thermal crystallizationmethod using a metallic element for promoting crystallization, or thelike). Then, the obtained crystalline semiconductor film is patterned ina predetermined shape to form the semiconductor layers 5002 to 5005.Note that an amorphous semiconductor film, a micro-crystallinesemiconductor film, a crystalline semiconductor film, a compoundsemiconductor film having an amorphous structure such as an amorphoussilicon germanium film, or the like may be used as the semiconductorfilm.

In this embodiment, an amorphous silicon film having a film thickness of55 nm is formed by a plasma CVD method. A solution containing nickel isheld on the amorphous silicon film and it is dehydrogenated at 500° C.for 1 hour, and then thermal crystallization is conducted at 550° C. for4 hours to form a crystalline silicon film. After that, patterningprocessing using a photolithography method is performed to form thesemiconductor layers 5002 to 5005.

Note that, when the crystalline semiconductor film is formed by a lasercrystallization method, a gas laser or a solid laser, which conductscontinuous oscillation or pulse oscillation is preferably used as thelaser. An excimer laser, a YAG laser, a YVO₄ laser, a YLF laser, a YAlO₃laser, a glass laser, a ruby laser, a Ti:sapphire laser, and the likecan be used as the former gas laser. In addition, a laser using acrystal such as YAG, YVO₄, YLF or YAlO₃, which is doped with Cr, Nd, Er,Ho, Ce, Co, Ti, or Tm can be used as the latter solid laser. Thefundamental of the laser is changed according to a doping material andlaser light having a fundamental of the neighborhood of 1 μm isobtained. A harmonic to the fundamental can be obtained by using anon-linear optical element. Note that, in order to obtain a crystalhaving a large grain size at the crystallization of the amorphoussemiconductor film, it is preferable that a solid laser capable ofconducting continuous oscillation is used and a second harmonic to afourth harmonic of the fundamental are applied. Typically, a secondharmonic (532 nm) or a third harmonic (355 nm) of an Nd:YVO₄ laser(fundamental of 1064 nm) is applied.

Also, laser light emitted from the continuous oscillation YVO₄ laserhaving an output of 10 W is converted into a harmonic by a non-linearoptical element. Further, there is a method of locating a YVO₄ crystaland a non-linear optical element in a resonator and emitting a harmonic.Preferably, laser light having a rectangular shape or an ellipticalshape is formed on an irradiation surface by an optical system andirradiated to an object to be processed. At this time, an energy densityof about 0.01 MW/cm² to 100 MW/cm² (preferably, 0.1 MW/cm² to 10 MW/cm²)is required. The semiconductor film is moved relatively to the laserlight at a speed of about 10 cm/s to 2000 cm/s to be irradiated with thelaser light.

Also, when the above laser is used, it is preferable that a laser beamemitted from a laser oscillator is linearly condensed by an opticalsystem and irradiated to the semiconductor film. A crystallizationcondition is set as appropriate. When an excimer laser is used, it ispreferable that a pulse oscillation frequency is set to 300 Hz and alaser energy density is set to 100 mJ/cm² to 700 mJ/cm² (typically, 200mJ/cm² to 300 mJ/cm²). In addition, when a YAG laser is used, it ispreferable that the second harmonic is used, a pulse oscillationfrequency is set to 1 Hz to 300 Hz, and a laser energy density is set to300 mJ/cm² to 1000 mJ/cm² (typically, 350 mJ/cm² to 500 mJ/cm²). A laserbeam linearly condensed at a width of 100 μm to 1000 μm (preferably, 400μm) is irradiated over the entire surface of the substrate. At thistime, an overlap ratio with respect to the linear beam may be set to 50%to 98%.

However, in this embodiment, the amorphous silicon film is crystallizedusing a metallic element for promoting crystallization so that themetallic element remains in the crystalline silicon film. Thus, anamorphous silicon film having a thickness of 50 nm to 100 nm is formedon the crystalline silicon film, heat treatment (thermal anneal using anRTA method or a furnace anneal furnace) is conducted to diffuse themetallic element into the amorphous silicon film, and the amorphoussilicon film is removed by etching after the heat treatment. As aresult, the metallic element contained in the crystalline silicon filmcan be reduced or removed.

Note that, after the formation of the semiconductor layers 5002 to 5005,doping with a trace impurity element (boron or phosphorus) may beconducted in order to control a threshold value of a TFT.

Next, a gate insulating film 5006 covering the semiconductor layers 5002to 5005 is formed. The gate insulating film 5006 is formed from aninsulating film containing silicon at a film thickness of 40 nm to 150nm by a plasma CVD method or a sputtering method. In this embodiment, asilicon oxynitride film is formed as the gate insulating film 5006 at athickness of 115 nm by the plasma CVD method. Of course, the gateinsulating film 5006 is not limited to the silicon oxynitride film.Another insulating film containing silicon may be used as a single layeror a laminate structure.

Note that, when a silicon oxide film is used as the gate insulating film5006, a plasma CVD method is employed, TEOS (tetraethyl orthosilicate)and O₂ are mixed, a reactive pressure is set to 40 Pa, and a substratetemperature is set to 300° C. to 400° C. Then, discharge may occur at ahigh frequency (13.56 MHz) power density of 0.5 W/cm² to 0.8 W/cm² toform the silicon oxide film. After that, when thermal anneal isconducted for the silicon oxide film formed by the above steps at 400°C. to 500° C., a preferable property as to the gate insulating film 5006can be obtained.

Next, a first conductive film 5007 having a film thickness of 20 nm to100 nm and a second conductive film 5008 having a film thickness of 100nm to 400 nm are laminated on the gate insulating film 5006. In thisembodiment, the first conductive film 5007 which has the film thicknessof 30 nm and is made from a TaN film and the second conductive film 5008which has the film thickness of 370 nm and is made from a W film arelaminated (FIG. 13A).

In this embodiment, the TaN film as the first conductive film 5007 isformed by a sputtering method using Ta as a target in an atmospherecontaining nitrogen. The W film as the second conductive film 5008 isformed by a sputtering method using W as a target. In addition, it canbe formed by a thermal CVD method using tungsten hexafluoride (WF₆). Inany case, when they are used for a gate electrode, it is necessary toreduce a resistance, and it is desirable that a resistivity of the Wfilm is set to 20 μΩcm or lower. When a crystal grain is enlarged, theresistivity of the W film can be reduced. However, if a large number ofimpurity elements such as oxygen exist in the W film, thecrystallization is suppressed so that the resistance is increased.Therefore, in this embodiment, the W film is formed by a sputteringmethod using high purity W (purity of 99.9999%) as a target while takinginto a consideration that an impurity does not enter the film from a gasphase at film formation. Thus, a resistivity of 9 μΩcm to 20 μΩcm can berealized.

Note that, in this embodiment, the TaN film is used as the firstconductive film 5007 and the W film is used as the second conductivefilm 5008. However, materials which compose the first conductive film5007 and the second conductive film 5008 are not particularly limited.The first conductive film 5007 and the second conductive film 5008 eachmay be formed from an element selected from Ta, W, Ti, Mo, Al, Cu, Cr,and Nd, or an alloy material or a compound material, which containsmainly the above element. In addition, they may be formed from asemiconductor film which is represented by a polycrystalline siliconfilm doped with an impurity element such as phosphorus, or an AgPdCualloy.

Next, a mask 5009 made of a resist is formed by using a photolithographymethod and first etching processing for forming electrodes and wiringsis performed. The first etching processing is performed under a firstetching condition and a second etching condition (FIG. 13B).

In this embodiment, as the first etching condition, an ICP (inductivelycoupled plasma) etching method is used. In addition, CF₄, Cl₂, and O₂are used as etching gases and a ratio of respective gas flow rates isset to 25:25:10 (sccm). RF power having 500 W and 13.56 MHz is suppliedto a coil type electrode at a pressure of 1.0 Pa to produce plasma,thereby conducting etching. RF power having 150 W and 13.56 MHz issupplied to a substrate side (sample stage) to apply a substantiallynegative self bias voltage thereto. The W film is etched under thisfirst etching condition so that end portions of the first conductivelayer 5007 are made to have taper shapes.

Subsequently, the etching condition is changed to the second etchingcondition without removing the mask 5009 made of a resist. CF₄ and Cl₂are used as etching gases and a ratio of respective gas flow rates isset to 30:30 (sccm). RF power having 500 W and 13.56 MHz is supplied toa coil type electrode at a pressure of 1.0 Pa to produce plasma, therebyconducting etching for about 15 seconds. RF power having 20 W and 13.56MHz is supplied to a substrate side (sample stage) to apply asubstantially negative self bias voltage thereto. In the second etchingcondition, both the first conductive film 5007 and the second conductivefilm 5008 are etched to the same degree. Note that, in order to conductetching without leaving the residue on the gate insulating film 5006, itis preferable that an etching time is increased at a rate of about 10 to20%.

In the above first etching processing, when a shape of the mask made ofa resist is made suitable, the end portions of the first conductive film5007 and the end portions of the second conductive film 5008 becometaper shapes by an effect of the bias voltage applied to the substrateside. Thus, first-shaped conductive layers 5010 to 5014 made from thefirst conductive layer 5007 and the second conductive layer 5008 areformed by the first etching processing. With respect to the insulatingfilm 5006, regions which are not covered with the first-shapedconductive layers 5010 to 5014 are etched by about 20 nm to 50 nm sothat thinner regions are formed.

Next, second etching processing is performed without removing the mask5009 made of a resist (FIG. 13C). In the second etching processing, SF₆,Cl₂, and O₂ are used as etching gases and a ratio of respective gas flowrates is set to 24:12:24 (sccm). RF power having 700 W and 13.56 MHz issupplied to a coil type electrode at a pressure of 1.3 Pa to produceplasma, thereby conducting etching for about 25 seconds. RF power having10 W and 13.56 MHz is supplied to a substrate side (sample stage) toapply a substantially negative self bias voltage thereto. Thus, the Wfilm is selectively etched to form second-shaped conductive layers 5015to 5019. At this time, first conductive layers 5015 a to 5018 a arehardly etched.

Then, first doping processing is performed without removing the mask5009 made of a resist to add an impurity element for providing an N-typeto the semiconductor layers 5002 to 5005 at a low concentration. Thefirst doping processing is preferably performed by an ion doping methodor an ion implantation method. With respect to a condition of the iondoping method, a dose is set to 1×10¹³ atoms/cm² to 5×10¹⁴ atoms/cm² andan accelerating voltage is set to 40 keV to 80 keV. In this embodiment,a dose is set to 5.0×10¹³ atoms/cm² and an accelerating voltage is setto 50 keV. As the impurity element for providing an N-type, an elementwhich belongs to Group 15 is preferably used, and typically, phosphorus(P) or arsenic (As) is used. In this embodiment, phosphorus (P) is used.In this case, the second-shaped conductive layers 5015 to 5019 becomemasks to the impurity element for providing an N-type. Thus, firstimpurity regions (N regions) 5020 to 5023 are formed in a selfalignment. Then, the impurity element for providing an N-type is addedto the first impurity regions 5020 to 5023 at a concentration range of1×10¹⁸ atoms/cm³ to 1×10²⁰ atoms/cm³.

Subsequently, after the mask 5009 made of a resist is removed, a newmask 5024 made of a resist is formed and second doping processing isperformed at a higher accelerating voltage than that in the first dopingprocessing. In a condition of an ion doping method, a dose is set to1×10¹³ atoms/cm² to 3×10¹⁵ atoms/cm² and an accelerating voltage is setto 60 keV to 120 keV. In this embodiment, a dose is set to 3.0×10¹⁵atoms/cm² and an accelerating voltage is set to 65 keV. In the seconddoping processing, second conductive layers 5015 b to 5018 b are used asmasks to an impurity element and doping is conducted such that theimpurity element is added to the semiconductor layers located under thetaper portions of the first conductive layers 5015 a to 5018 a.

As a result of the above second doping processing, the impurity elementfor providing an N-type is added to second impurity regions (N⁻ regions;Lov regions) 5026 overlapped with the first conductive layers at aconcentration range of 1×10¹⁸ atoms/cm³ to 5×10¹⁹ atoms/cm³. Inaddition, the impurity element for providing an N-type is added to thirdimpurity regions (N⁺ regions) 5025 and 5028 at a concentration range of1×10¹⁹ atoms/cm³ to 5×10²¹ atoms/cm³. After the first and second dopingprocessings, regions to which no impurity element is added or regions towhich the trace impurity element is added are formed in thesemiconductor layers 5002 to 5005. In this embodiment, the regions towhich the impurity element is not completely added or the regions towhich the trace impurity element is added are called channel regions5027 and 5030. In addition, there are, of the first impurity regions(N⁻⁻ regions) 5020 to 5023 formed by the above first doping processing,regions covered with the resist 5024 in the second doping processing. Inthis embodiment, they are continuously called first impurity regions(N⁻⁻ regions; LDD regions) 5029 (FIG. 13D).

Note that, in this embodiment, the second impurity regions (N⁻ regions)5026 and the third impurity regions (N⁺ regions) 5025 and 5028 areformed by only the second doping processing. However, the presentinvention is not limited to this. A condition for doping processing maybe changed as appropriate and doping processing may be performed pluraltimes to form those regions.

Next, as shown in FIG. 14A, after the mask 5024 made of a resist isremoved, a new mask 5031 made of a resist is formed. After that, thirddoping processing is performed. By the third doping processing, fourthimpurity regions (P⁺ regions) 5032 and 5034 and fifth impurity regions(P⁻ regions) 5033 and 5035 to which an impurity element for providing aconductivity type reverse to the above first conductivity type is addedare formed in the semiconductor layers as active layers of P-channelTFTs.

In the third doping processing, the second conductive layers 5016 b and5018 b are used as masks to the impurity element. Thus, the impurityelement for providing a P-type is added to form the fourth impurityregions (P+ regions) 5032 and 5034 and the fifth impurity regions (P⁻regions) 5033 and 5035 in a self alignment.

In this embodiment, the fourth impurity regions 5032 and 5034 and thefifth impurity regions 5033 and 5035 are formed by an ion doping methodusing diborane (B₂H₆). In a condition of the ion doping method, a doseis set to 1×10¹⁶ atoms/cm² and an accelerating voltage is set to 80 keV.

Note that, in the third doping processing, the semiconductor layerscomposing N-channel TFTs are covered with the masks 5031 made of aresist.

Here, by the first and second doping processings, phosphorus is added tothe fourth impurity regions (P⁺ regions) 5032 and 5034 and the fifthimpurity regions (P⁻ regions) 5033 and 5035 at different concentrations.In the third doping processing, doping processing is conducted such thata concentration of the impurity element for providing a P-type is 1×10¹⁹atoms/cm³ to 5×10²¹ atoms/cm³ in any region of the fourth impurityregions (P⁺ regions) 5032 and 5034 and the fifth impurity regions (P⁻regions) 5033 and 5035. Thus, the fourth impurity regions (P⁺ regions)5032 and 5034 and the fifth impurity regions (P-regions) 5033 and 5035serve as the source regions and the drain regions of the P-channel TFTswithout causing a problem.

Note that, in this embodiment, the fourth impurity regions (P+ regions)5032 and 5034 and the fifth impurity regions (P⁻ regions) 5033 and 5035are formed by only the third doping processing. However, the presentinvention is not limited to this. A condition for doping processing maybe changed as appropriate and doping processing may be performed pluraltimes to form those regions.

Next, as shown in FIG. 14B, the mask 5031 made of a resist is removedand a first interlayer insulating film 5036 is formed. An insulatingfilm containing silicon is formed as the first interlayer insulatingfilm 5036 at a thickness of 100 nm to 200 nm by a plasma CVD method or asputtering method. In this to embodiment, a silicon oxynitride film isformed at a film thickness of 100 nm by a plasma CVD method. Of course,the first interlayer insulating film 5036 is not limited to the siliconoxynitride film, and therefore another insulating film containingsilicon may be used as a single layer or a laminate structure.

Next, as shown in FIG. 14C, heat treatment is performed for the recoveryof crystallinity of the semiconductor layers and the activation of theimpurity element added to the semiconductor layers. This heat treatmentis performed by a thermal anneal method using a furnace anneal furnace.The thermal anneal method is preferably conducted in a nitrogenatmosphere in which an oxygen concentration is 1 ppm or less,preferably, 0.1 ppm or less at 400° C. to 700° C. In this embodiment,the heat treatment at 410° C. for 1 hour is performed for the activationprocessing. Note that a laser anneal method or a rapid thermal annealmethod (RTA method) can be applied in addition to the thermal annealmethod.

Also, the heat treatment may be performed before the formation of thefirst interlayer insulating film 5036. However, if materials whichcompose the first conductive layers 5015 a to 5019 a and the secondconductive layers 5015 b to 5019 b are sensitive to heat, it ispreferable that heat treatment is performed after the first interlayerinsulating film 5036 (insulating film containing mainly silicon, forexample, silicon nitride film) for protecting a wiring and the like isformed as in this embodiment.

As described above, when the heat treatment is performed after theformation of the first interlayer insulating film 5036 (insulating filmcontaining mainly silicon, for example, silicon nitride film), thehydrogenation of the semiconductor layer can be also conductedsimultaneous with the activation processing. In the hydrogenation step,a dangling bond of the semiconductor layer is terminated by hydrogencontained in the first interlayer insulating film 5036.

Note that heat treatment for hydrogenation which is different from theheat treatment for activation processing may be performed.

Here, the semiconductor layer can be hydrogenated regardless of thepresence or absence of the first interlayer insulating, film 5036. Asanother means for hydrogenation, means for using hydrogen excited byplasma (plasma hydrogenation) or means for performing heat treatment inan atmosphere containing hydrogen of 3% to 100% at 300° C. to 450° C.for 1 hour to 12 hours may be used.

Next, a second interlayer insulating film 5037 is formed on the firstinterlayer insulating film 5036. An inorganic insulating film can beused as the second interlayer insulating film 5037. For example, asilicon oxide film formed by a CVD method, a silicon oxide film appliedby an SOG (spin on glass) method, or the like can be used. In addition,an organic insulating film can be used as the second interlayerinsulating film 5037. For example, a film made of polyimide, polyamide,BCB (benzocyclobutene), acrylic, or the like can be used. Further, alaminate structure of an acrylic film and a silicon oxide film may beused.

In this embodiment, an acrylic film having a film thickness of 1.6 μm isformed. When the second interlayer insulating film 5037 is formed,unevenness caused by TFTs formed on the substrate 5000 is reduced andthe surface can be leveled. In particular, the second interlayerinsulating film 5037 has a strong sense of leveling. Thus, a film havingsuperior evenness is preferable.

Next, using dry etching or wet etching, the second interlayer insulatingfilm 5037, the first interlayer insulating film 5036, and the gateinsulating film 5006 are etched to form contact holes which reach thethird impurity regions 5025 and 5028 and the fourth impurity regions5032 and 5034.

Next, a pixel electrode 5038 made from a transparent conductive film isformed. A compound of indium oxide and tin oxide (indium tin oxide:ITO), a compound of indium oxide and zinc oxide, zinc oxide, tin oxide,indium oxide, or the like can be used for the transparent conductivefilm. In addition, the transparent conductive film to which gallium isadded may be used. The pixel electrode corresponds to the anode of an ELelement.

In this embodiment, an ITO film is formed at a thickness of 110 nm andthen patterned to form the pixel electrode 5038.

Next, wirings 5039 to 5045 electrically connected with the respectiveimpurity regions are formed. Note that, in this embodiment, a Ti filmhaving a film thickness of 100 nm, an Al film having a film thickness of350 nm, and a Ti film having a film thickness of 100 nm are formed intoa laminate in succession by a sputtering method and a resultant laminatefilm is patterned in a predetermined shape so that the wirings 5039 to5045 are formed.

Of course, they are not limited to a three-layer structure. A singlelayer structure, a two-layer structure, or a laminate structure composedof four layers or more may be used. Materials of the wirings are notlimited to Al and Ti, and therefore other conductive films may be used.For example, an Al film or a Cu film is formed on a TaN film, a Ti filmis formed thereon, and then a resultant laminate film is patterned toform the wirings.

Thus, one of the source and the drain of an N-channel TFT in a pixelportion is electrically connected with a source signal line (laminate of5019 a and 5019 b) through the wiring 5042 and the other is electricallyconnected with the gate electrode of a P-channel TFT in the pixelportion through the wiring 5043. In addition, one of the source and thedrain of the P-channel TFT in the pixel portion is electricallyconnected with a pixel electrode 5047 through the wiring 5044. Here, aportion on the pixel electrode 5047 and a portion of the wiring 5044 areoverlapped with each other so that electrical connection between thewiring 5044 and the pixel electrode 5047 is produced.

By the above steps, as shown in FIG. 14D, the driver circuit portionincluding the CMOS circuit composed of the N-channel TFT and theP-channel TFT and the pixel portion including the switching TFT and thedriving TFT can be formed on the same substrate.

The N-channel TFT in the driver circuit portion includes lowconcentration impurity regions 5026 (Lov regions) overlapped with thefirst conductive layer 5015 a composing a portion of the gate electrodeand high concentration impurity regions 5025 which each serve as thesource region or the drain region. The P-channel TFT which is connectedwith the N-channel TFT through the wiring 5040 and composes the CMOScircuit includes low concentration impurity regions 5033 (Lov regions)overlapped with the first conductive layer 5016 a composing a portion ofthe gate electrode and high concentration impurity regions 5032 whicheach serve as the source region or the drain region.

The N-channel switching TFT in the pixel portion includes lowconcentration impurity regions 5029 (Loff regions) formed outside thegate electrode and high concentration impurity regions 5028 which eachserve as the source region or the drain region. In addition, theP-channel driving TFT in the pixel portion includes low concentrationimpurity regions 5035 (Lov regions) overlapped with the first conductivelayer 5018 a composing a portion of the gate electrode and highconcentration impurity regions 5034 which each serve as the sourceregion or the drain region.

Next, a third interlayer insulating film 5046 is formed. An inorganicinsulating film or an organic insulating film can be used as the thirdinterlayer insulating film. A silicon oxide film formed by a CVD method,a silicon oxide film applied by an SOG (spin on glass) method, or thelike can be used as the inorganic insulating film. In addition, anacrylic resin film or the like can be used as the organic insulatingfilm.

Examples of a combination of the second interlayer insulating film 5037and the third interlayer insulating film 5046 will be described below.

There is a combination in which a silicon oxide film formed by a plasmaCVD method is used as the second interlayer insulating film 5037 and asilicon oxide film formed by a plasma CVD method is used as the thirdinterlayer insulating film 5046. In addition, there is a combination inwhich a silicon oxide film formed by an SOG method is used as the secondinterlayer insulating film 5037 and a silicon oxide film formed by anSOG method is used as the third interlayer insulating film 5046. Inaddition, there is a combination in which a laminate film of a siliconoxide film formed by an SOG method and a silicon oxide film formed by aplasma CVD method is used as the second interlayer insulating film 5037and a silicon oxide film formed by a plasma CVD method is used as thethird interlayer insulating film 5046. In addition, there is acombination in which acrylic is used for the second interlayerinsulating film 5037 and acrylic is used for the third interlayerinsulating film 5046. In addition, there is a combination in which alaminate film of an acrylic film and a silicon oxide film formed by aplasma CVD method is used as the second interlayer insulating film 5037and a silicon oxide film formed by a plasma CVD method is used as thethird interlayer insulating film 5046. In addition, there is acombination in which a silicon oxide film formed by a plasma CVD methodis used as the second interlayer insulating film 5037 and acrylic isused for the third interlayer insulating film 5046.

An opening portion is formed at a position corresponding to the pixelelectrode 5047 in the third interlayer insulating film 5046. The thirdinterlayer insulating film serves as a bank. When a wet etching methodis used at the formation of the opening portion, it can be easily formedas a side wall having a taper shape. If the side wall of the openingportion is not sufficiently gentle, the deterioration of an EL layer bya step becomes a marked problem. Thus, attention is required.

A carbon particle or a metallic particle may be added into the thirdinterlayer insulating film 5046 to reduce resistivity, therebysuppressing the generation of static electricity. At this time, theamount of carbon particle or metallic particle to be added is preferablyadjusted such that the resistivity becomes 1×10⁶ Ωm to 1×10¹² Ωm(preferably, 1×10⁸ Ωm to 1×10¹⁰ Ωm).

Next, an EL layer 5047 is formed on the pixel electrode 5038 exposed inthe opening portion of the third interlayer insulating film 5046.

An organic light emitting material or an inorganic light emittingmaterial which are known can be used as the EL layer 5047.

A low molecular weight based organic light emitting material, a highmolecular weight based organic light emitting material, or a mediummolecular weight based organic light emitting material can be freelyused as the organic light emitting material. Note that in thisspecification, a medium molecular weight based organic light emittingmaterial indicates an organic light emitting material which has nosublimation property and in which the number of molecules is 20 or lessor a length of chained molecules is 10 μm or less.

The EL layer 5047 has generally a laminate structure. Typically, thereis a laminate structure of “a hole transporting layer, a light emittinglayer, and an electron transporting layer”, which has been proposed byTang et al. in Eastman Kodak Company. In addition to this, a structurein which “a hole injection layer, a hole transporting layer, a lightemitting layer, and an electron transporting layer” or “a hole injectionlayer, a hole transporting layer, a light emitting layer, an electrontransporting layer, and an electron injection layer” are laminated on ananode in this order may be used. A light emitting layer may be dopedwith fluorescent pigment or the like.

In this embodiment, the EL layer 5047 is formed by an evaporation methodusing a low molecular weight based organic light emitting material.Specifically, a laminate structure in which a copper phthalocyanine(CuPc) film having a thickness of 20 nm is provided as the holeinjection layer and a tris-8-quinolinolato aluminum complex (Alq₃) filmhaving a thickness of 70 nm is provided thereon as the light emittinglayer is used. A light emission color can be controlled by addingfluorescent pigment such as quinacridon, perylene, or DCM1 to Alq₃.

Note that only one pixel is shown in FIG. 14D. However, a structure inwhich the EL layers 5047 corresponding to respective colors of, pluralcolors, for example, R (red), G (green), and B (blue) are separatelyformed can be used.

Also, as an example using the high molecular weight based organic lightemitting material, the EL layer 5047 may be constructed by a laminatestructure in which a polythiophene (PEDOT) film having a thickness of 20nm is provided as the hole injection layer by a spin coating method anda paraphenylenevinylene (PPV) film having a thickness of about 100 nm isprovided thereon as the light emitting layer. When π conjugated systempolymer of PPV is used, a light emission wavelength from red to blue canbe selected. In addition, an inorganic material such as silicon carbidecan be used as the electron transporting layer and the electroninjection layer.

Note that the EL layer 5047 is not limited to a layer having a laminatestructure in which the hole injection layer, the hole transportinglayer, the light emitting layer, the electron transporting layer, theelectron injection layer, and the like are distinct. In other words, theEL layer 5047 may have a laminate structure with a layer in whichmaterials composing the hole injection layer, the hole transportinglayer, the light emitting layer, the electron transporting layer, theelectron injection layer, and the like are mixed.

For example, the EL layer 5047 may have a structure in which a mixedlayer composed of a material composing the electron transporting layer(hereinafter referred to as an electron transporting material) and amaterial composing the light emitting layer (hereinafter referred to asa light emitting material) is located between the electron transportinglayer and the light emitting layer.

Next, a pixel electrode 5048 made from a conductive film is provided onthe EL layer 5047. In the case of this embodiment, an alloy film ofaluminum and lithium is used as the conductive film. Of course, a knownMgAg film (alloy film of magnesium and silver) may be used. The pixelelectrode 5048 corresponds to the cathode of the EL element. Aconductive film made of an element which belongs to Group 1 or Group 2of the periodic table or a conductive film to which those elements areadded can be freely used as a cathode material.

When the pixel electrode 5048 is formed, the EL element is completed.Note that the EL element indicates an element composed of the pixelelectrode (anode) 5038, the EL layer 5047, and the pixel electrode(cathode) 5048.

It is effective that a passivation film 5049 is provided to completelycover the EL element. A single layer of an insulating film such as acarbon film, a silicon nitride film, or a silicon oxynitride film, or alaminate layer of a combination thereof can be used as the passivationfilm 5049.

It is preferable that a film having good coverage is used as thepassivation film 5049, and it is effective to use a carbon film,particularly, a DLC (diamond like carbon) film. The DLC film can beformed at a temperature range of from a room temperature to 100° C.Thus, a film can be easily formed over the EL layer 5047 having a lowheat-resistance. In addition, the DLC film has a high blocking effect tooxygen so that the oxidization of the EL layer 5047 can be suppressed.Therefore, a problem in that the EL layer 5047 is oxidized can beprevented.

Note that, it is effective that steps up to the formation of thepassivation film 5049 after the formation of the third interlayerinsulating film 5046 are conducted in succession using a multi-chambertype (or in-line type) film formation apparatus without being exposed toair.

Note that, actually, when it is completed up to the state shown in FIG.14D, in order not to be exposed to air, it is preferable that packaging(sealing) is conducted using a protective film (laminate film,ultraviolet curable resin film, or the like) or a transparent sealingmember which has a high airtight property and low degassing. At thistime, when an inner portion surrounded by the sealing member is made toan inert atmosphere or a hygroscopic material (for example, bariumoxide) is located in the inner portion, the reliability of the ELelement is improved.

Also, after an airtightness level is increased by processing such aspackaging, a connector (flexible printed circuit: FPC) for connectingterminals led from elements or circuits which are formed on thesubstrate 5000 with external signal terminals is attached so that it iscompleted as a product.

Also, according to the steps described in this embodiment, the number ofphoto masks required for manufacturing a semiconductor device can bereduced. As a result, the process is shortened and it can contribute tothe reduction in manufacturing cost and the improvement of a yield.

Embodiment 12

In this embodiment, a process of manufacturing the active matrixsubstrate having a structure different from that described in Embodiment11 will be described using FIGS. 15A to 15D.

Note that, the steps up to the step shown in FIG. 15A are similar tothose shown in FIGS. 13A to 13D and 14A in Embodiment 11. Note that itis different from Embodiment 11 at a point that a driving TFT composinga pixel portion is an N-channel TFT having low concentration impurityregions (Loff regions) formed outside the gate electrode. With respectto the driving TFT, as described in Embodiment 9, the low concentrationimpurity regions (Loff regions) may be formed outside the gate electrodeusing a mask made of a resist.

Portions similar to FIGS. 13A to 13D and 14A to 14D are indicated usingthe same symbols and the description is omitted here.

As shown in FIG. 15A, a first interlayer insulating film 5101 is formed.An insulating film containing silicon is formed as the first interlayerinsulating film 5101 at a thickness of 100 nm to 200 nm by a plasma CVDmethod or a sputtering method. In this embodiment, a silicon oxynitridefilm having a film thickness of 100 nm is formed by a plasma CVD method.Of course, the first interlayer insulating film 5101 is not limited tothe silicon oxynitride film, and therefore another insulating filmcontaining silicon may be used as a single layer or a laminatestructure.

Next, as shown in FIG. 15B, heat treatment (thermal processing) isperformed for the recovery of crystallinity of the semiconductor layersand the activation of the impurity element added to the semiconductorlayers. This heat treatment is performed by a thermal anneal methodusing a furnace anneal furnace. The thermal anneal method is preferablyconducted in a nitrogen atmosphere in which an oxygen concentration is 1ppm or less, preferably, 0.1 ppm or less at 400° C. to 700° C. In thisembodiment, the heat treatment at 410° C. for 1 hour is performed forthe activation processing. However, if a laser anneal method or a rapidthermal anneal method (RTA method) can be applied in addition to thethermal anneal method.

Also, the heat treatment may be performed before the formation of thefirst interlayer insulating film 5101. Note that, the first conductivelayers 5015 a to 5019 a and the second conductive layers 5015 b to 5019b are sensitive to heat, it is preferable that heat treatment isperformed after the first interlayer insulating film 5101 (insulatingfilm containing mainly silicon, for example, silicon nitride film) forprotecting a wiring and the like is formed as in this embodiment.

As described above, when the heat treatment is performed after theformation of the first interlayer insulating film 5101 (insulating filmcontaining mainly silicon, for example, silicon nitride film), thehydrogenation of the semiconductor layer can be also conductedsimultaneous with the activation processing. In the hydrogenation step,a dangling bond of the semiconductor layer is terminated by hydrogencontained in the first interlayer insulating film 5101.

Note that heat treatment for hydrogenation other than the heat treatmentfor activation processing may be performed.

Here, the semiconductor layer can be hydrogenated regardless of thepresence or absence of the first interlayer insulating film 5101. Asanother means for hydrogenation, means for using hydrogen excited byplasma (plasma hydrogenation) or means for performing heat treatment inan atmosphere containing hydrogen of 3% to 100% at 300° C. to 450° C.for 1 hour to 12 hours may be used.

By the above steps, the driver circuit portion including the CMOScircuit composed of the N-channel TFT and the P-channel TFT and thepixel portion including the switching TFT and the driving TFT can beformed on the same substrate.

Next, a second interlayer insulating film 5102 is formed on the firstinterlayer insulating film 5101. An inorganic insulating film can beused as the second interlayer insulating film 5102. For example, asilicon oxide film formed by a CVD method, a silicon oxide film appliedby an SOG (spin on glass) method, or the like can be used. In addition,an organic insulating film can be used as the second interlayerinsulating film 5102. For example, a film made of polyimide, polyamide,BCB (benzocyclobutene), acrylic, or the like can be used. Further, alaminate structure of an acrylic film and a silicon oxide film may beused.

Next, using dry etching or wet etching, the first interlayer insulatingfilm 5101, the second interlayer insulating film 5102, and the gateinsulating film 5006 are etched to form contact holes which reachimpurity regions (third impurity regions (N+ regions) and fourthimpurity regions (P+ regions)) of respective TFTs which compose thedriver circuit portion and the pixel portion.

Next, wirings 5103 to 5109 electrically connected with the respectiveimpurity regions are formed (FIG. 15B). Note that, in this embodiment, aTi film having a film thickness of 100 nm, an Al film having a filmthickness of 350 nm, and a Ti film having a film thickness of 100 nm areformed in succession by a sputtering method and a resultant laminatefilm is patterned in a predetermined shape so that the wirings 5103 to5109 are formed.

Of course, they are not limited to a three-layer structure. A singlelayer structure, a two-layer structure, or a laminate structure composedof four layers or more may be used. Materials of the wirings are notlimited to Al and Ti, and therefore other conductive films may be used.For example, it is preferable that an Al film or a Cu film is formed ona TaN film, a Ti film is formed thereon, and then a resultant laminatefilm is patterned to form the wirings.

One of the source region and the drain region of a switching TFT in apixel portion is electrically connected with a source signal line(laminate of 5019 a and 5019 b) through the wiring 5106 and the other iselectrically connected with the gate electrode of a driving TFT in thepixel portion through the wiring 5107.

Next, as shown in FIG. 15C, a third interlayer insulating film 5110 isformed. An inorganic insulating film or an organic insulating film canbe used as the third interlayer insulating film 5110. A silicon oxidefilm formed by a CVD method, a silicon oxide film applied by an SOG(spin on glass) method, or the like can be used as the inorganicinsulating film. In addition, an acrylic resin film or the like can beused as the organic insulating film.

When the third interlayer insulating film 5110 is formed, unevennesscaused by TFTs formed on the substrate 5000 is reduced and the surfacecan be leveled. In particular, the third interlayer insulating film 5110is for leveling. Thus, a film having superior evenness is preferable.

Next, using dry etching or wet etching, the third interlayer insulatingfilm 5110 is etched to form contact holes which reach the wiring 5108.

Next, a conductive film is patterned to form a pixel electrode 5111. Inthe case of this embodiment, an alloy film of aluminum and lithium isused as the conductive film. Of course, a known MgAg film (alloy film ofmagnesium and silver) may be used. The pixel electrode 5111 correspondsto the cathode of the EL element. A conductive film made of an elementwhich belongs to Group 1 or Group 2 of the periodic table or aconductive film to which those elements are added can be freely used asa cathode material.

The pixel electrode 5111 is electrically connected with the wiring 5108through a contact hole formed in the third interlayer insulating film5110. Thus, the pixel electrode 5111 is electrically connected with oneof the source region and the drain region of the driving TFT.

Next, as shown in FIG. 15D, banks 5112 are formed such that EL layers ofrespective pixels are separated from each other. The banks 5112 areformed from an inorganic insulating film or an organic insulating film.A silicon oxide film formed by a CVD method, a silicon oxide filmapplied by an SOG method, or the like can be used as the inorganicinsulating film. In addition, an acrylic resin film or the like can beused as the organic insulating film.

Here, when a wet etching method is used at the formation of the banks5112, they can be easily formed as side walls having taper shapes. Ifthe side walls of the banks 5112 are not sufficiently gentle, thedeterioration of an EL layer caused by a step becomes a marked problem.Thus, attention is required.

Note that, when the pixel electrode 5111 and the wiring 5108 areelectrically connected with each other, the banks 5112 are formed inportions of the contact holes formed in the third interlayer insulatingfilm 5110. Thus, unevenness of the pixel electrode caused by unevennessof the contact hole portions is leveled by the banks 5112 so that thedeterioration of the EL layer caused by the step is prevented.

Examples of a combination of the third interlayer insulating film 5110and the banks 5112 will be described below.

There is a combination in which a silicon oxide film formed by a plasmaCVD method is used as the third interlayer insulating film 5110 and asilicon oxide film formed by a plasma CVD method is used as the banks5112. In addition, there is a combination in which a silicon oxide filmformed by an SOG method is used as the third interlayer insulating film5110 and a silicon oxide film formed by an SOG method is used as thebanks 5112. In addition, there is a combination in which a laminate filmof a silicon oxide film formed by an SOG method and a silicon oxide filmformed by a plasma CVD method is used as the third interlayer insulatingfilm 5110 and a silicon oxide film formed by a plasma CVD method is usedas the banks 5112. In addition, there is a combination in which acrylic,is used for the third interlayer insulating film 5110 and acrylic isused for the banks 5112. In addition, there is a combination in which alaminate film of an acrylic film and a silicon oxide film formed by aplasma CVD method is used as the third interlayer insulating film 5110and a silicon oxide film formed by a plasma CVD method is used as thebanks 5112. In addition, there is a combination in which a silicon oxidefilm formed by a plasma CVD method is used as the third interlayerinsulating film 5110 and acrylic is used for the banks 5112.

A carbon particle or a metallic particle may be added into the banks5112 to reduce resistivity, thereby suppressing the generation of staticelectricity. At this time, the amount of carbon particle or metallicparticle to be added is preferably adjusted such that the resistivitybecomes 1×10⁶ Ωm to 1×10¹² Ωm (preferably, 1×10⁸ Ωm to 1×10¹⁰ Ωm).

Next, an EL layer 5113 is formed on the pixel electrode 5038 which issurrounded by the banks 5112 and exposed.

An organic light emitting material or an inorganic light emittingmaterial which are known can be used as the EL layer 5113.

A low molecular weight based organic light emitting material, a highmolecular weight based organic light emitting material, or a mediummolecular weight based organic light emitting material can be freelyused as the organic light emitting material. Note that in thisspecification, a medium molecular weight based organic light emittingmaterial indicates an organic light emitting material which has nosublimation property and in which the number of molecules is 20 or lessor a length of chained molecules is 10 μm or less.

The EL layer 5113 has generally a laminate structure. Typically, thereis a laminate structure of “a hole transporting layer, a light emittinglayer, and an electron transporting layer”, which has been proposed byTang et al. in Eastman Kodak Company. In addition to this, a structurein which “an electron transporting layer, a light emitting layer, a holetransporting layer, and an hole injection layer” or “an electroninjection layer, a light emitting layer, an hole transporting layer, anda hole injection layer” are laminated on an cathode in this order may beused. A light emitting layer may be doped with fluorescent pigment orthe like.

In this embodiment, the EL layer 5113 is formed by an evaporation methodusing a low molecular weight based organic light emitting material.Specifically, a laminate structure in which a tris-8-quinolinolatoaluminum complex (Alq₃) film having a thickness of 70 nm is provided asthe light emitting layer and a copper phthalocyanine (CuPc) film havinga thickness of 20 nm is provided thereon as the light emitting layer isused. A light emission color can be controlled by adding fluorescentpigment such as quinacridon, perylene, or DCM1 to Alq₃.

Note that only one pixel is shown in FIG. 15D. However, a structure inwhich the EL layers 5113 corresponding to respective colors of, pluralcolors, for example, R (red), G (green), and B (blue) are separatelyformed can be used.

Also, as an example using the high molecular weight based organic lightemitting material, the EL layer 5113 may be constructed by a laminatestructure in which a polythiophene (PEDOT) film having a thickness of 20nm is provided as the hole injection layer by a spin coating method anda paraphenylenevinylene (PPV) film having a thickness of about 100 nm isprovided thereon as the light emitting layer. When π conjugated systempolymer of PPV is used, a light emission wavelength from red to blue canbe selected. In addition, an inorganic material such as silicon carbidecan be used for the electron transporting layer and the electroninjection layer.

Note that the EL layer 5113 is not limited to a layer having a laminatestructure in which the hole injection layer, the hole transportinglayer, the light emitting layer, the electron transporting layer, theelectron injection layer, and the like are distinct. In other words, theEL layer 5113 may have a laminate structure with a layer in whichmaterials composing the hole injection layer, the hole transportinglayer, the light emitting layer, the electron transporting layer, theelectron injection layer, and the like are mixed.

For example, the EL layer 5113 may have a structure in which a mixedlayer composed of a material composing the electron transporting layer(hereinafter referred to as an electron transporting material) and amaterial composing the light emitting layer (hereinafter referred to asa light emitting material) is located between the electron transportinglayer and the light emitting layer.

Next, a pixel electrode 5114 made from a transparent conductive film isformed on the EL layer 5113. A compound of indium oxide and tin oxide(ITO), a compound of indium oxide and zinc oxide, zinc oxide, tin oxide,indium oxide, or the like can be used for the transparent conductivefilm. In addition, the transparent conductive film to which gallium isadded may be used. The pixel electrode 5114 corresponds to the anode ofthe EL element.

When the pixel electrode 5114 is formed, the EL element is completed.Note that the EL element indicates a diode composed of the pixelelectrode (cathode) 5111, the EL layer 5113, and the pixel electrode(anode) 5114.

In this embodiment, the pixel electrode 5114 is made from thetransparent conductive film. Thus, light emitted from the EL element isradiated to an opposite side to the substrate 5000. In addition, throughthe third interlayer insulating film 5110, the pixel electrode 5111 isformed in the layer different from the layer in which the wirings 5106and 5109 are formed. Thus, an aperture ratio can be increased ascompared with the structure described in Embodiment 9.

It is effective that a protective film (passivation film) 5115 isprovided to completely cover the EL element. A single layer of aninsulating film such as a carbon film, a silicon nitride film, or asilicon oxynitride film, or a laminate layer of a combination thereofcan be used as the protective film 5115.

Note that, when light emitted from the EL element is radiated from thepixel electrode 5114 side as in this embodiment, it is necessary to usea film which transmits light as a protective film 5115.

Note that it is effective that steps up to the formation of theprotective film 5115 after the formation of the banks 5112 are conductedin succession using a multi-chamber type (or in-line type) filmformation apparatus without being exposed to air.

Note that, actually, when it is completed up to the state shown in FIG.15D, in order not to be exposed to air, it is preferable that packaging(sealing) is conducted using a protective film (laminate film,ultraviolet curable resin film, or the like) or a sealing member whichhas a high airtight property and low degassing. At the same time, whenan inner portion surrounded by the sealing member is made to an inertatmosphere or a hygroscopic material (for example, barium oxide) islocated in the inner portion, the reliability of the EL element isimproved.

Also, after an airtightness level is improved by processing such aspackaging, a connector (flexible printed circuit: FPC) for connectingterminals led from elements or circuits which are formed on thesubstrate 5000 with external signal terminals is attached so that it iscompleted as a product.

Embodiment 13

In this embodiment, an example in which a semiconductor device ismanufactured according to the present invention will be described usingFIGS. 16A to 16C.

FIG. 16A is a top view of a semiconductor device produced by sealing anelement substrate in which TFTs are formed with a sealing member. FIG.16B is a cross sectional view along a line A-A′ in FIG. 16A. FIG. 16C isa cross sectional view along a line B-B′ in FIG. 16A.

A seal member 4009 is provided to surround a pixel portion 4002, asource signal line driver circuit 4003, and first and second gate signalline driver circuits 4004 a and 4004 b which are provided on a substrate4001. In addition, a sealing member 4008 is provided over the pixelportion 4002, the source signal line driver circuit 4003, and the firstand second gate signal line driver circuits 4004 a and 4004 b. Thus, thepixel portion 4002, the source signal line driver circuit 4003, and thefirst and second gate signal line driver circuits 4004 a and 4004 b aresealed with the substrate 4001, the seal member 4009 and the sealingmember 4008 and filled with a filling agent 4210.

Also, the pixel portion 4002, the source signal line driver circuit4003, and the first and second gate signal line driver circuits 4004 aand 4004 b which are provided on the substrate 4001 each have aplurality of TFTs. In FIG. 16B, TFTs (note that an N-channel TFT and aP-channel TFT are shown here) 4201 included in the source signal linedriver circuit 4003 and a TFT 4202 included in the pixel portion 4002,which are formed on a base film 4010 are typically shown.

An interlayer insulating film (planarization film) 4301 is formed on theTFTs 4201 and 4202, and a pixel electrode (anode) 4203 electricallyconnected with the drain of the TFT 4202 is formed thereon. Atransparent conductive film having a large work function is used as thepixel electrode 4203. A compound of indium oxide and tin oxide, acompound of indium oxide and zinc oxide, zinc oxide, tin oxide, orindium oxide can be used for the transparent conductive film. Inaddition, the transparent conductive film to which gallium is added maybe used.

An insulating film 4302 is formed on the pixel electrode 4203. Anopening portion is formed in the insulating film 4302 on the pixelelectrode 4203. In the opening portion, an organic light emitting layer4204 is formed on the pixel electrode 4203. An organic light emittingmaterial or an inorganic light emitting material which are known can beused as the organic light emitting layer 4204. In addition, the organiclight emitting material includes a low molecular weight based (monomersystem) material and a high molecular weight based (polymer system)material, and any material may be used.

An evaporation technique or an applying method technique which are knownis preferably used as a method of forming the organic light emittinglayer 4204. In addition, a laminate structure or a single layerstructure which is obtained by freely combining a hole injection layer,a hole transporting layer, a light emitting layer, an electrontransporting layer, and an electron injection layer is preferably usedas the structure of the organic light emitting layer.

A cathode 4205 made from a conductive film having a light shieldingproperty (typically, a conductive film containing mainly aluminum,copper, or silver, or a laminate film of the conductive film and anotherconductive film) is formed on the organic light emitting layer 4204. Inaddition, it is desirable that moisture and oxygen which exist in aninterface between the cathode 4205 and the organic light emitting layer4204 are minimized. Thus, a devise is required in which the organiclight emitting layer 4204 is formed in a nitrogen atmosphere or a nobleatmosphere and the cathode 4205 without being exposed to oxygen andmoisture is formed. In this embodiment, the above film formation ispossible by using a multi-chamber type (cluster tool type) filmformation apparatus. A predetermined voltage is supplied to the cathode4205.

By the above steps, a light emitting element 4303 composed of the pixelelectrode (anode) 4203, the organic light emitting layer 4204, and thecathode 4205 is formed. A protective film 4209 is formed on theinsulating film 4302 so as to cover the light emitting element 4303. Theprotective film 4209 is effective to prevent oxygen, moisture, and thelike from penetrating the light emitting element 4303.

Reference numeral 4005 a denotes a lead wiring connected with a powersource, which is connected with a first electrode of the TFT 4202. Thelead wiring 4005 a is passed between the seal member 4009 and thesubstrate 4001 and electrically connected with an FPC wiring 4301 of anFPC 4006 through an anisotropic conductive film 4300.

A glass material, a metallic member (typically, a stainless member), aceramic member, a plastic member (including a plastic film) can be usedas the sealing member 4008. An FRP (fiberglass reinforced plastic)plate, a PVF (polyvinyl fluoride) film, a Mylar film, a polyester film,or an acrylic resin film can be used as the plastic member. In addition,a sheet having a structure in which aluminum foil is sandwiched by a PVFfilm and a Mylar film can be used.

Note that, when a radiation direction of light from the light emittingelement is toward a cover member side, it is required that the covermember is transparent. In this case, a transparent material such as aglass plate, a plastic plate, a polyester film, or acrylic film is used.

Also, in addition to an inert gas such as nitrogen or argon, ultravioletcurable resin or thermal curable resin can be used for the filling agent4210. PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, siliconresin, PVB (polyvinyl butyral), or EVA (ethylene vinyl acetate) can beused. In this embodiment, nitrogen is used for the filling agent.

Also, in order to expose the filling agent 4210 to a hygroscopicmaterial (preferably barium oxide) or a material capable of absorbingoxygen, a concave portion 4007 is provided to the surface of the sealingmember 4008 in the substrate 4001 side, and the hygroscopic material orthe material capable of absorbing oxygen which is indicated by 4207 islocated. In order to prevent the material 4207 having a hygroscopicproperty or being capable of absorbing oxygen from flying off, thematerial 4207 having a hygroscopic property or being capable ofabsorbing oxygen is held in the concave portion 4007 by a concave covermember 4208. Note that concave cover member 4208 is formed in a finemeshed shape and constructed such that it transmits air and moisture butdoes not transmit the material 4207 having a hygroscopic property orbeing capable of absorbing oxygen. When the material 4207 having ahygroscopic property or being capable of absorbing oxygen is provided,the deterioration of the light emitting element 4303 can be suppressed.

As shown in FIG. 16C, a conductive film 4203 a is formed on the leadwiring 4005 a such that it is in contact with the lead wiring 4005 asimultaneously with the formation of the pixel electrode 4203.

Also, the anisotropic conductive film 4300 has a conductive filler 4300a. When the substrate 4001 and the FPC 4006 are bonded to each other bythermal compression, the conductive film 4203 a located over thesubstrate 4001 and the FPC wiring 4301 located on the FPC 4006 areelectrically connected with each other through the conductive filler5300 a.

Embodiment 14

According to the present invention, an organic light emitting materialwhich can utilize phosphorescence from triplet excitation for lightemission is used. Thus, external light emission quantum efficiency canbe dramatically improved. Therefore, reduction in consumption power, anincrease in life, and weight reduction of the light emitting elementbecome possible.

Here, a report in which external light emission quantum efficiency isimproved by utilizing triplet excitation is shown. (T. Tsutsui, C.Adachi, S. Saito, Photochemical Processes in Organized MolecularSystems, ed. K. Honda, (Elsevier Sci. Pub., Tokyo, 1991) p. 437)

A molecular formula of an organic light emitting material (coumarinpigment) reported from the above paper is indicated below.

(M. A. Baldo, D. F. O'Brien, Y. You, A. Shoustikov, S. Sibley, M. E.Thompson, S. R. Forrest, Nature 395 (1998) p. 151)

A molecular formula of an organic light emitting material (Pt complex)reported from the above paper is indicated below.

(M. A. Baldo, S. Lamansky, P. E. Burrrows, M. E. Tompson, S. R. Forrest,Appl. Phys. Lett., 75 (1999) p. 4) (T. Tsutsui, M.-J. Yang, M. Yahiro,K. Nakamura, T. Watanabe, T. Tsuji, Y. Fukuda, T. Wakimoto, S.Mayaguchi, Jpn. Appl. Phys., 38 (12B) (1999) L1502.)

A molecular formula of an organic light emitting material (Ir complex)reported from the above paper is indicated below.

As described above, if phosphorescence light emission from tripletexcitation can be utilized, external light emission quantum efficiencywhich is three to four times larger then that in the case wherefluorescence light emission from singlet excitation is used can berealized in theory.

Embodiment 15

A semiconductor device using a light emitting element is a self lightemission type. Thus, such a semiconductor device has high visibility ina light place and a wide viewing angle, as compared with a liquidcrystal display. Therefore, it can be used for a display portion ofvarious electronic devices.

As electronic devices using the semiconductor device of the presentinvention, there are a video camera, a digital camera, a goggle typedisplay (head mount display), a navigation system, a sound reproducingdevice (car audio system, audio component system, or the like), a notetype personal computer, a game machine, a portable information terminal(mobile computer, mobile telephone, portable game machine, an electricbook, or the like), an image reproducing device including a recordingmedium (specifically, apparatus for reproducing an image from arecording medium such as a digital versatile disc (DVD), which includesa display capable of displaying the image), and the like. In particular,in the case of the portable information terminal in which a screen isviewed from an oblique direction in many cases, it is important that aview angle is large. Thus, it is desirable that the semiconductor deviceis used. Concrete examples of those electronic devices are shown inFIGS. 17A to 17H.

FIG. 17A shows a light emitting element display device which includes acabinet 3001, a support base 3002, a display portion 3003, a speakerportion 3004, and a video input terminal 3005. The semiconductor deviceof the present invention can be used for the display portion 3003. Thesemiconductor device is a self light emission type and thus does notrequire a back light. Therefore, a thinner display portion than a liquidcrystal display can be obtained. Note that the light emitting elementdisplay device includes all display devices for information display suchas personal computer, TV broadcast receiving, and advertisement display.

FIG. 17B is a digital still camera, which is composed of a main body3101, a display portion 3102, an image-receiving portion 3103, operationkeys 3104, external connection ports 3105, a shutter 3106, and the like.The semiconductor device of the present invention can be used in thedisplay portion 3102.

FIG. 17C is a notebook personal computer, which is composed of a mainbody 3201, a frame 3202, a display portion 3203, a keyboard 3204,external connection ports 3205, a pointing mouse 3206, and the like. Thesemiconductor device of the present invention can be used in the displayportion 3203.

FIG. 17D is a mobile computer, which is composed of a main body 3301, adisplay portion 3302, a switch 3303, operation keys 3304, an infraredport 3305, and the like. The semiconductor device of the presentinvention can be used in the display portion 3302.

FIG. 17E is a portable image reproducing device equipped with arecording medium (specifically, a DVD player), and is composed of a mainbody 3401, a frame 3402, a display portion A 3403, a display portion B3404, a recording medium (such as a DVD) read-in portion 3405, operationkeys 3406, a speaker portion 3407, and the like. The display portion A3403 mainly displays image information, and the display portion B 3404mainly displays character information, and the semiconductor device ofthe present invention can be used in the display portion A 3403 and inthe display portion B 3404. Note that family game machines and the likeare included in the category of image reproducing devices provided witha recording medium.

FIG. 17F is a goggle type display device (head mounted display), whichis composed of a main body 3501, a display portion 3502, and an armportion 3503. The semiconductor device of the present invention can beused in the display portion 3502.

FIG. 17G is a video camera, which is composed of a main body 3601, adisplay portion 3602, a frame 3603, external connection ports 3604, aremote control receiving portion 3605, an image receiving portion 3606,a battery 3607, an audio input portion 3608, operation keys 3609, andthe like. The semiconductor device of the present invention can be usedin the display portion 3602.

FIG. 17H is a mobile telephone, which is composed of a main body 3701, aframe 3702, a display portion 3703, an audio input portion 3704, anaudio output portion 3705, operation keys 3706, external connectionports 3707, an antenna 3708, and the like. The semiconductor device ofthe present invention can be used in the display portion 3703. Note thatwhite characters are displayed on a black background in the displayportion 3703, and thus, the power consumption of the mobile telephonecan be suppressed.

Note that, when a light emitting intensity of an organic light emittingmaterial is increased in future, it can be used for a front type or arear type projector for magnifying and projecting outputted lightincluding image information by a lens or the like.

Also, in the above electronic devices, the number of cases whereinformation distributed through an electronic communication line such asan Internet or a CATV (cable television) is displayed is increased. Inparticular, a chance in which moving image information is displayed isincreased. A response speed of the organic light emitting material isvery high. Thus, the semiconductor device is preferable for moving imagedisplay.

Also, with respect to the semiconductor device, power is consumed in aportion which emits light. Thus, it is desirable that information isdisplayed so as to minimize an area of a light emitting portion.Accordingly, when the semiconductor device is used for a display portionof, a portable information terminal, particularly, a mobile telephone ora sound reproducing device in which character information is mainlydisplayed, it is desirable that the semiconductor device is driven so asto use a non-light emitting portion as a background and producecharacter information in a light emitting portion.

As described above, an application area of the present invention isextremely wide and the semiconductor device can be used for electronicdevices in all fields. In addition, the semiconductor device having anystructure described in Embodiments 1 to 14 may be used for theelectronic devices of this embodiment.

Embodiment 16

In the method of correcting the threshold value of the transistoraccording to the present invention, the following phenomenon isutilized. That is, with a diode state produced by a short circuitbetween the gate and the drain of the transistor used for correction, acurrent flows between the source and the drain so that a voltage betweenthe source and the drain becomes equal to the threshold value of thetransistor. This can be applied to not only the case of the pixelportion described in the present invention but also the case of thedriver circuit.

As an example, there is a current source circuit in a driver circuit foroutputting a current into a pixel and the like. The current sourcecircuit is a circuit for outputting a predetermined current based on aninputted voltage signal. The voltage signal is inputted to the gateelectrode of a current source transistor in the current source circuit,and a current corresponding to the voltage between the gate and thesource is outputted through the current source transistor. In otherwords, the threshold value correcting method of the present invention isused for correcting the threshold value of the current sourcetransistor.

FIG. 26A shows a utilization example of the current source circuit.Sampling pulses are outputted in succession from a shift register. Thesampling pulses are inputted to respective current source circuits 9001.Sampling of a video signal is conducted in accordance with timing atwhich the sampling pulses are inputted to the current source circuits9001. In this case, sampling operation is conducted in dot sequentialmanner.

Simple operational timing is shown in FIG. 26B. During a period forwhich a gate signal line of an i-th line is selected, a sampling pulseis outputted from the shift register and it is divided into a period forsampling of a video signal and a retrace period. During the retraceperiod, the threshold value correcting operation of the presentinvention, that is, a series of operations in which potentials ofrespective portions are initialized and threshold voltages oftransistors are obtained are conducted. In other words, the thresholdvalue obtaining operation can be conducted for each horizontal period.

FIG. 27A shows a configuration of a driver circuit for outputting acurrent to a pixel and the like, which is different from that shown inFIG. 26A. A point different from the case of FIG. 26A is that thecurrent source circuit 9001 controlled according to a first stagesampling pulse becomes two circuits 9001A and 9001B, and both operationsare selected according to a current source control signal.

As shown in FIG. 27B, the current source control signal is switched, forexample, for each horizontal period. Thus, operations are performed suchthat one of the current source circuits 9001A and 9001B conducts currentoutput to a pixel and the like and the other conducts input of a videosignal, and the like. Such operations are alternatively conducted foreach line. In this case, sampling operation is conducted in linesequential manner.

FIG. 28A shows a configuration of a driver circuit which is differentfrom the above configurations. Here, the current source circuit 9001controlled according to a first stage sampling pulse becomes threecircuits 9001A, 9001B, and 9001C and respective operations are selectedaccording to a video input control signal and an output control signal.

As shown in FIG. 28B, according to the video input control signal andthe output control signal, the operations of the current source circuits9001A, 9001B, and 9001C are switched for each horizontal period in theorder of threshold value correction, video signal input, current outputto a pixel. Sampling operation is conducted in line sequential manner asin the case of the configuration shown in FIG. 27A.

FIG. 29A shows a configuration of a driver circuit which is differentfrom the above configurations. In FIG. 26A to FIG. 28B, a video signaltype may be digital or analog. However, in the configuration shown inFIG. 29A, a digital video signal is inputted. The inputted digital videosignal is latched into a first latch circuit according to output of asampling pulse. After the latch of a video signal corresponding to aline is completed, it is transferred to a second latch circuit. Afterthat, it is inputted to respective current source circuits 9001A to9001C. Here, currents outputted from the respective current sourcecircuits 9001A to 9001C are different from one another. For example, aratio of current values becomes 1:2:4. In other words, n current sourcecircuits are arranged in parallel, a ratio of the current values is setto 1:2:4, . . . , 2^((n−1)), the currents outputted from the respectivecurrent source circuits are added. Thus, the outputted current valuescan be linearly changed.

Operational timing is substantially the same as that shown in FIG. 26B.During a retrace period for which sampling operation is not conducted,the threshold value correcting operation is conducted by the currentsource circuit 9001, subsequently data held in the latch circuit istransferred, V-I conversion is conducted by the current source circuit9001, and a current is outputted to a pixel. Sampling operation isconducted in line sequential manner as in the case of the configurationshown in FIG. 27A.

FIG. 30A shows a configuration of a driver circuit for outputting acurrent to a pixel and the like, which is different from the aboveconfigurations. According to the configuration, a digital video signallatched in the latch circuit is transferred to a D/A converting circuitin accordance with input of a latch signal, converted into an analogvideo signal, and the analog video signal is inputted to the respectivecurrent source circuits 9001 so that a current is outputted.

Also, for example, a gamma correction function may be provided for suchD/A converter circuit.

As shown in FIG. 30B, during a retrace period, threshold valuecorrection and latch data transfer are conducted. During a period forwhich sampling operating is conducted for a line, V-I conversion of avideo signal of a preceding line and current output to a pixel and thelike are conducted. Sampling operation is conducted in line sequentialmanner as in the case of the configuration shown in FIG. 27A.

The present invention is not limited to the above describedconfigurations. When the V-I conversion is conducted by the currentsource circuit, the threshold value correcting means of the presentinvention can be applied. In addition, the configurations as shown inFIGS. 27A and 28A in which the plurality of current source circuits arearranged in parallel and used by switching may be combined with theconfigurations as shown in FIGS. 29A and 30A.

According to the present invention, a variation in threshold value of aTFT for each pixel can be normally corrected without being influenced bya variation in capacitance value of capacitor means. Even if the presentinvention is compared with a conventional example, it is based on moresimple operational principle and there is no case where the number ofelements is greatly increased. Thus, there is no worry that an apertureratio and the like are reduced. Accordingly, it can be said to be veryeffective.

1. (canceled)
 2. A semiconductor device comprising: a pixel comprising:a first transistor; a second transistor; a third transistor; a fourthtransistor; a fifth transistor; and a first capacitor, wherein a gate ofthe first transistor is directly connected to a first electrode of thefirst capacitor, wherein one of a source and a drain of the secondtransistor is directly connected to the gate of the first transistor,wherein the other of the source and the drain of the second transistoris directly connected to one of a source and a drain of the firsttransistor, wherein one of a source and a drain of the third transistoris directly connected to a second electrode of the first capacitor,wherein one of a source and a drain of the fourth transistor is directlyconnected to a pixel electrode of a light-emitting element, wherein theother of the source and the drain of the fourth transistor is directlyconnected to the one of the source and the drain of the firsttransistor, and wherein one of a source and a drain of the fifthtransistor is directly connected to the second electrode of the firstcapacitor.
 3. The semiconductor device according to claim 2, wherein theother of the source and the drain of the fifth transistor iselectrically connected to the gate of the first transistor.
 4. Thesemiconductor device according to claim 2, wherein a gate of the thirdtransistor is directly connected to a first gate signal line, andwherein a gate of the second transistor is directly connected to asecond gate signal line.
 5. The semiconductor device according to claim4, wherein a gate of the fourth transistor is directly connected to athird gate signal line, and wherein a gate of the fifth transistor isdirectly connected to a fourth gate signal line.
 6. The semiconductordevice according to claim 2, further comprising a second capacitordirectly connected to the second electrode of the first capacitor. 7.The semiconductor device according to claim 2, further comprising: aflexible print circuit; and a driver circuit, wherein the driver circuitis configured to select a gate signal line directly connected to a gateof the third transistor, and wherein the flexible print circuit isoperatively connected to the driver circuit.
 8. A semiconductor devicecomprising: a pixel comprising: a first transistor; a second transistor;a third transistor; a fourth transistor; a fifth transistor; a sixthtransistor; and a first capacitor, wherein a gate of the firsttransistor is directly connected to a first electrode of the firstcapacitor, wherein one of a source and a drain of the second transistoris directly connected to the gate of the first transistor, wherein theother of the source and the drain of the second transistor is directlyconnected to one of a source and a drain of the first transistor,wherein one of a source and a drain of the third transistor is directlyconnected to a second electrode of the first capacitor, wherein one of asource and a drain of the fourth transistor is directly connected to apixel electrode of a light-emitting element, wherein the other of thesource and the drain of the fourth transistor is directly connected tothe one of the source and the drain of the first transistor, wherein oneof a source and a drain of the fifth transistor is directly connected tothe second electrode of the first capacitor, and wherein one of a sourceand a drain of the sixth transistor is directly connected to the otherof the source and the drain of the fifth transistor.
 9. Thesemiconductor device according to claim 8, wherein the other of thesource and the drain of the sixth transistor is directly connected tothe gate of the first transistor.
 10. The semiconductor device accordingto claim 8, wherein a gate of the third transistor is directly connectedto a first gate signal line, and wherein a gate of the second transistoris directly connected to a second gate signal line.
 11. Thesemiconductor device according to claim 10, wherein a gate of the fourthtransistor is directly connected to a third gate signal line, andwherein a gate of the fifth transistor is directly connected to a fourthgate signal line.
 12. The semiconductor device according to claim 8,wherein a gate of the sixth transistor is directly connected to the gateof the first transistor.
 13. The semiconductor device according to claim8, further comprising a second capacitor directly connected to thesecond electrode of the first capacitor.
 14. The semiconductor deviceaccording to claim 8, further comprising: a flexible print circuit; anda driver circuit, wherein the driver circuit is configured to select agate signal line directly connected to a gate of the third transistor,and wherein the flexible print circuit is operatively connected to thedriver circuit.
 15. A mobile telephone comprising: an antenna; and adisplay portion comprising a pixel, the pixel comprising: a firsttransistor; a second transistor; a third transistor; a fourthtransistor; a fifth transistor; and a first capacitor, wherein a gate ofthe first transistor is directly connected to a first electrode of thefirst capacitor, wherein one of a source and a drain of the secondtransistor is directly connected to the gate of the first transistor,wherein the other of the source and the drain of the second transistoris directly connected to one of a source and a drain of the firsttransistor, wherein one of a source and a drain of the third transistoris directly connected to a second electrode of the first capacitor,wherein one of a source and a drain of the fourth transistor is directlyconnected to a pixel electrode of a light-emitting element, wherein theother of the source and the drain of the fourth transistor is directlyconnected to the one of the source and the drain of the firsttransistor, and wherein one of a source and a drain of the fifthtransistor is directly connected to the second electrode of the firstcapacitor.
 16. The mobile telephone according to claim 15, wherein theother of the source and the drain of the fifth transistor iselectrically connected to the gate of the first transistor.
 17. Themobile telephone according to claim 15, wherein a gate of the thirdtransistor is directly connected to a first gate signal line, andwherein a gate of the second transistor is directly connected to asecond gate signal line.
 18. The mobile telephone according to claim 17,wherein a gate of the fourth transistor is directly connected to a thirdgate signal line, and wherein a gate of the fifth transistor is directlyconnected to a fourth gate signal line.
 19. The mobile telephoneaccording to claim 15, further comprising a second capacitor directlyconnected to the second electrode of the first capacitor.
 20. The mobiletelephone according to claim 15, further comprising: a flexible printcircuit; and a driver circuit, wherein the driver circuit is configuredto select a gate signal line directly connected to a gate of the thirdtransistor, and wherein the flexible print circuit is operativelyconnected to the driver circuit.